Thermo-mechanical and metallurgical preliminary analysis of SiC MOSFET gate-damage mode under short-circuit based on a complete transient multiphysics 2D FEM

Shqair, M.; Sarraute, E.; Cazimajou, T.; Richardeau, F.

doi:10.1016/j.microrel.2023.115081

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Thermo-mechanical and metallurgical preliminary analysis of SiC MOSFET gate-damage mode under short-circuit based on a complete transient multiphysics 2D FEM

Cited by 3 publications

References 20 publications

Numerical investigation of printed circuit board response during solder float test: Influence of thermal boundary conditions

Numerical investigation of printed circuit board response during solder float test: Influence of thermal boundary conditions

A Full Transient ElectroThermal - Elastoplastic Mechanical and Metallurgical 2D FEM of SiC MOSFET for Gate-Region Stress Investigation under Short-Pulse Short-Circuit (Invited)

Ruggedness of Silicon Power MOSFETs—Part I: Cell Structure Design Related Failure: A Review

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