Thermochemical reaction of ZrOx(Ny) interfaces on Ge and Si substrates

Abstract

Thermochemical behavior of hydrogen in hafnium silicate films on Si

Zirconium Oxynitride-Catalyzed Oxygen Reduction Reaction at Polymer Electrolyte Fuel Cell Cathodes

“…The Zr 3d signal of the 973 K sample was split into Zr 3d 5/2 and 3d 3/2 peaks by spin–orbit coupling, appearing as a doublet at 182.6 and 184.9 eV assigned to Zr 4+ in ZrO 2 . 50−52 Compared to the signals observed before NH 3 pyrolysis (dashed line), these peaks were slightly shifted to lower binding energies, suggesting that the surface was partially reduced by NH 3 pyrolysis at 973 K. Both samples showed noisy N 1s spectra, with peaks above 398 eV attributed to zirconium oxynitride 50−53 and nitrogen-doped carbon species. 54 Because of a high degree of overlap, these peaks could not be deconvoluted; however, it can be concluded that NH 3 pyrolysis at 973 K did not significantly enhance the level of ZrO 2 surface nitrogen doping.…”

“…Further, rhombohedral Zr 7 O 8 N 4 formed when the temperature was increased to 1073–1173 K, transforming into cubic Zr 2 ON 2 at 1273 K (Figure S2), which implies that nitrogen atoms were doped into the bulk at T > 973 K. NH 3 pyrolysis at 973 K did not significantly affect the surface chemical states, as shown by X-ray photoelectron Zr 3d and N 1s spectra in Figure c. The Zr 3d signal of the 973 K sample was split into Zr 3d 5/2 and 3d 3/2 peaks by spin–orbit coupling, appearing as a doublet at 182.6 and 184.9 eV assigned to Zr 4+ in ZrO 2 . − Compared to the signals observed before NH 3 pyrolysis (dashed line), these peaks were slightly shifted to lower binding energies, suggesting that the surface was partially reduced by NH 3 pyrolysis at 973 K. Both samples showed noisy N 1s spectra, with peaks above 398 eV attributed to zirconium oxynitride − and nitrogen-doped carbon species . Because of a high degree of overlap, these peaks could not be deconvoluted; however, it can be concluded that NH 3 pyrolysis at 973 K did not significantly enhance the level of ZrO 2 surface nitrogen doping.…”

Characteristics of Hafnium–Zirconium–Oxide Film Treated by Remote Plasma Nitridation

“…This easy removal of nitrogen atoms from the films indicates either that both the Hf-N and Zr-N bond chemical states are more unstable than that of Hf-O and Zr-O, or that the incorporated nitrogen does not have any strong chemical binding with Hf and Zr, but forms a weak binding with oxygen. 19,20 Figure 2 shows the Hf 4f and Zr 3d XPS spectra of the approximately 5 nm hafnium-zirconium-oxide films. As shown in Fig.…”

“…Plasma nitridation, however, can incorporate nitrogen into the dielectric film at lower temperatures ͑below 500°C͒ than the thermal nitridation process. [17][18][19] In this study, we deposited hafnium-zirconium-oxide films on Si substrates by atomic layer deposition ͑ALD͒. After the film deposition, remote plasma nitridation ͑RPN͒ was performed to incorporate nitrogen at a low temperature, prevent the generation of hydrogen-containing species, densify the film, and minimize plasma-induced damage.…”

Electrical Characteristics of the HfAlON Gate Dielectric With Interfacial UV-Ozone Oxide

“…Therefore, an alternative gate dielectric material is needed to replace SiO 2 . High-permittivity (high-κ) dielectrics are potential candidates, because a thicker film can be utilized to reduce the direct tunneling leakage current while maintaining the same gate capacitance [2]- [4]. However, direct deposition of high-κ dielectrics on silicon surface will inevitably deteriorate device performances and reliability characteristics [5].…”