Thermochemistry and growth mechanism of SiC nanowires

Chen, Jianjun; Ding, Lijuan; Xin, Lipeng; Zeng, Fanguang; Chen, Jun

doi:10.1016/j.jssc.2017.06.009

Cited by 54 publications

(20 citation statements)

References 40 publications

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“…HRTEM image (Figure B) reveals that the nanowire surface was covered by an amorphous layer. EDX results (not shown) proved that that the amorphous layer should be silicon oxide generated during the cooling stage . A periodic lattice structure with lattice fringes distance of 0.25 nm was observed, which is consistent with the (111) plane of 3C‐SiC.…”

Section: Resultsmentioning

confidence: 53%

“…The most common polytypes of SiC nw are 2 hexagonal ones, 4H‐SiC and 6H‐SiC (α‐SiC), as well as 1 cubic polytype known as 3C‐SiC (β‐SiC) . Among them, 3C‐SiC nanowires are considered as the ideal composite reinforcements because of their excellent mechanical properties, simple preparation process, and low preparation temperature . In our previous work, 3C‐SiC nanowires were introduced into the ceramic coatings of carbon/carbon (C/C) composites.…”

Section: Introductionmentioning

confidence: 99%

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Effects of pyrocarbon on morphology stability of SiC nanowires at high temperatures

Cheng

et al. 2018

J Am Ceram Soc

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To understand the effect of pyrocarbon (PyC) on the morphology stability of SiC nanowires at high temperatures (1800-2100°C), a PyC layer was prepared to wrap the 3C-SiC nanowire by chemical vapor deposition. The results showed that the existence and thickness of PyC layer played a crucial role in stabilizing the structures and morphology of SiC nanowires. The SiC nanowires without PyC layer transformed to platelet-shaped structures above 1800°C. The SiC nanowires with a~1.5 lm PyC layer could keep their structures and morphology at 2100°C, while the SiC nanowires with a~1 lm PyC layer could not maintain their microstructures at this temperature. The stability of SiC nanowires at high temperature might be related to the vapor phase nucleation, thermodynamics phase transformation and the stacking faults (SFs) expansion, which could be limited by the PyC layer. Therefore, preparing a protective PyC layer with an appropriate thickness might be a potential method to extend the practical applications of SiC nanowires at high temperatures. K E Y W O R D Sheat treatment, morphology stability, PyC coated SiC nanowires

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Section: Resultsmentioning

confidence: 53%

Section: Introductionmentioning

confidence: 99%

Effects of pyrocarbon on morphology stability of SiC nanowires at high temperatures

Cheng

et al. 2018

J Am Ceram Soc

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“…The growth mechanism of SiC nanoparticles is agreement with the previous reports. 32,33 In addition, with the temperature rose to 1414 C (Si mp), Si particles melt and which facilitated the formation of the SiC nanoparticles. The ow of argon gas can protect the SiC nanoparticles from being oxidized during the whole reaction process.…”

Section: Resultsmentioning

confidence: 99%

Study on the synthesis of β-SiC nanoparticles from diamond-wire silicon cutting waste

et al. 2019

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“…To date, carbon nanotubes have been successfully synthesized in an open tube furnace system . Based on our previous investigation on the thermochemistry and growth mechanism of SiC NWs, we presented a novel synthesis method of SiC NWs in an open reaction system in this work. To the best of our knowledge, this was the first report on the synthesis of SiC NWs in the open tube furnace.…”

Section: Introductionmentioning

confidence: 99%

Catalytic synthesis of SiC nanowires in an open system

et al. 2019

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SiC nanowires (NWs) are usually synthesized in a closed vacuum reaction system which limits the yield of SiC NWs. In this work, SiC NWs and carbon nanotubes were synthesized in an open tube furnace at 1550°C with Si powder as silicon sources, ethanol as carbon sources and ferrocene as catalyst. The as‐synthesized products were ultralong β‐SiC NWs with the diameter about 80‐100 nm and the length up to several tens micrometers. The diameter of the carbon nanotubes was about 20‐30 nm. The carbon nanotube yarns about 20 cm in length were obtained at the end of the tube furnace. The growth mechanism of SiC NWs and carbon nanotubes were proposed. Compared with the traditional synthetic techniques in the high vacuum closed system, the novel synthesis method in the open system provided a new approach to the synthesis of SiC NWs.

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Thermochemistry and growth mechanism of SiC nanowires

Cited by 54 publications

References 40 publications

Effects of pyrocarbon on morphology stability of SiC nanowires at high temperatures

Effects of pyrocarbon on morphology stability of SiC nanowires at high temperatures

Study on the synthesis of β-SiC nanoparticles from diamond-wire silicon cutting waste

Catalytic synthesis of SiC nanowires in an open system

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