2013
DOI: 10.1016/j.apsusc.2013.04.031
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Thermochromic properties of VO2 thin film on SiNx buffered glass substrate

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Cited by 42 publications
(19 citation statements)
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“…They have observed that at higher substrate temperature from 550 to 600°C led to a transition temperature of 75°C and 80°C, respectively and these values are closer to our reported values but a little bit higher and this may be due to the difference in glass substrate type used. As reported by J.B. Kana Kana et al [15], the major two effects that could led to this higher VO 2 transition temperature are a slight stoichiometry deviation and/or a possible diffusion of some element from the glass substrate to the films such as Al, Na or Ca. This would explain why we have observed higher transition temperature at higher crystal grain sizes, which may be related to some effect induced by the substrate glass transition temperature reported to be around 575°C during the 600°C thin films growth since thickness of the samples are the same.…”
Section: Resultsmentioning
confidence: 80%
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“…They have observed that at higher substrate temperature from 550 to 600°C led to a transition temperature of 75°C and 80°C, respectively and these values are closer to our reported values but a little bit higher and this may be due to the difference in glass substrate type used. As reported by J.B. Kana Kana et al [15], the major two effects that could led to this higher VO 2 transition temperature are a slight stoichiometry deviation and/or a possible diffusion of some element from the glass substrate to the films such as Al, Na or Ca. This would explain why we have observed higher transition temperature at higher crystal grain sizes, which may be related to some effect induced by the substrate glass transition temperature reported to be around 575°C during the 600°C thin films growth since thickness of the samples are the same.…”
Section: Resultsmentioning
confidence: 80%
“…There are many reports on controlling the transition temperature of VO 2 thin film, either by doping [12,13] or applying stress [14,15]. Due to the small compositional differences between the numerous phases of vanadium oxide, VO 2 preparation requires a stringently controlled process that provides the desired oxygen stoichiometry and correct crystalline structure.…”
Section: Introductionmentioning
confidence: 99%
“…Novota et al found that TiO 2 films deposited on SLG exhibited a brookite dominant crystalline phase [10]. Koo et al reported that a SiN x diffusion barrier is necessary to crystallize VO 2 films [12]. The XRD patterns reveal a preferential [101] orientation for the sol–gel TiO 2 films, whereas the reactive sputtered TiO 2 films show a [001] preferential orientation.…”
Section: Resultsmentioning
confidence: 99%
“…SiN x diffusion barriers show better efficiency than SiO 2 with respect to inhibition of the diffusion of Na + ions [6]. The sodium ion concentration (which diffuses at the film surface) is strongly related to the thickness of the SiN x layer [12]. Depending on the coating process, the thickness threshold required to prevent sodium ion diffusion and to guarantee a Na + -free TiO 2 film is 100 nm [6] and 30 nm [12] for the reactive sputtered method and plasma-enhanced chemical vapor deposition, respectively.…”
Section: Introductionmentioning
confidence: 99%
“…Besides the antireflection layers on the top of VO 2 films, buffer layers between the substrates and VO 2 films also play important roles in the optical performances of integrated coatings. Some buffer layers as SiO 2 , TiO 2 , SnO 2 , ZnO, CeO 2 , and SiN x have been investigated in reported works [75][76][77][78]. Nevertheless, thermochromic performances of VO 2 coatings obtained based on above buffer layers are fair, which still can not match the requirements for practical applications.…”
Section: Multilayer Design For Vo 2 Thin Filmsmentioning
confidence: 91%