2015
DOI: 10.1016/j.jcrysgro.2014.09.002
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Thermodynamic analysis and growth of ZnSe single crystals in Zn-Se-I2 system

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Cited by 3 publications
(2 citation statements)
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“…According to our recent experiments and calculation, Zn-Se-I 2 system has the total pressure 4.23 atm and the partial pressure 1.07 atm of rate-limiting species ZnI 2 under the mentioned conditions [24], which indicates that the mass transport of Zn-Se-I 2 system is dominated by diffusion-convection model during the growth of ZnSe crystal, being larger than that of ZnSe-I 2 system [25]. Thus, when the gas atoms are carried progressively to the grown surface under the relative lower pressure, the diffusion distance of the atom on the surface became short.…”
Section: Resultsmentioning
confidence: 93%
“…According to our recent experiments and calculation, Zn-Se-I 2 system has the total pressure 4.23 atm and the partial pressure 1.07 atm of rate-limiting species ZnI 2 under the mentioned conditions [24], which indicates that the mass transport of Zn-Se-I 2 system is dominated by diffusion-convection model during the growth of ZnSe crystal, being larger than that of ZnSe-I 2 system [25]. Thus, when the gas atoms are carried progressively to the grown surface under the relative lower pressure, the diffusion distance of the atom on the surface became short.…”
Section: Resultsmentioning
confidence: 93%
“…Growth conditions optimization is necessary to advance in the knowledge and comprehension of the involved mass transference processes and in the diffusive and convective effects to obtain a good quality single crystalline material [4,5]. The quality of detectors and optical devices prepared with this material critically depends on their properties [6].…”
Section: Introductionmentioning
confidence: 99%