Thermodynamic Analysis of Dissolved Oxygen in a Silicon Melt and the Effect of Processing Parameters on the Oxygen Distribution in Single-crystal Silicon During Czochralski Growth

Zhao, Liang; Lv, Guoqiang; Ma, Wenhui; Zhang, Mengyu; Huang, Zhenling

doi:10.1007/s12633-022-02059-x

Search citation statements

Order By: Relevance

Paper Sections

Select...

Introduction1

Citation Types

Supporting

Mentioning

Contrasting

Year Published

2023

2024

Publication Types

Select...

Article4

Other1

Relationship

Self Cite1

Independent4

Authors

Journals

Cited by 8 publications

(1 citation statement)

References 40 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…11 Collet and Li et al applied FEMAG for simulation of oxygen transport. 12,13 Some open-source codes such as OpenFOAM 11,[14][15][16] and Elmer 17 were also used in simulation of Cz silicon growth.…”

Section: Introductionmentioning

confidence: 99%

Three-dimensional modelling of 300 mm Czochralski silicon crystal growth with a transverse magnetic field

et al. 2023

View full text Add to dashboard Cite

show abstract

Section: Introductionmentioning

confidence: 99%

Three-dimensional modelling of 300 mm Czochralski silicon crystal growth with a transverse magnetic field

et al. 2023

View full text Add to dashboard Cite

show abstract

Study on the Influence of the Pulling Rate on the Axial and Radial Uniformity of Gallium in Czochralski Monocrystalline Silicon Crystal

et al. 2023

Silicon

View full text Add to dashboard Cite

Investigation of the Influence of Solid–Liquid Interface Shape Based on the Jordan Model on Cz-Silicon Dislocation Defects

Li,

Zhao,

Huang

et al. 2023

Silicon

Self Cite

View full text Add to dashboard Cite

During the growth of Czochralski single crystal silicon, the change of solid-liquid interface shape leads to uneven distribution of thermal stress, and the concentration of thermal stress leads to crystal defects in the process of single crystal formation, which reduces the efficiency of solar cells. In order to avoid a large number of crystal defects caused by the concentration of thermal stress near the solid-liquid interface, the effect of the solid-liquid interface shape on thermal stresses is investigated in this study using numerical calculations to determine the most favourable solid-liquid interface shape for single crystal silicon growth.The results show that the von Mises stress on the m-shaped solid-liquid interface is smaller ; von Mises stress distribution on the solid-liquid interface of a shape is more uniform ; the von Mises stress on the solid-liquid interface of the n-shaped solid-liquid interface is large, and the von Mises stress can be released by controlling the solid-liquid flipping through a small range of pulling speed fluctuations, thereby reducing defects in single-crystal silicon.

show abstract

Thermodynamic Analysis of Dissolved Oxygen in a Silicon Melt and the Effect of Processing Parameters on the Oxygen Distribution in Single-crystal Silicon During Czochralski Growth

Cited by 8 publications

References 40 publications

Three-dimensional modelling of 300 mm Czochralski silicon crystal growth with a transverse magnetic field

Three-dimensional modelling of 300 mm Czochralski silicon crystal growth with a transverse magnetic field

Study on the Influence of the Pulling Rate on the Axial and Radial Uniformity of Gallium in Czochralski Monocrystalline Silicon Crystal

Investigation of the Influence of Solid–Liquid Interface Shape Based on the Jordan Model on Cz-Silicon Dislocation Defects

Contact Info

Product

Resources

About