Thermodynamic analysis of liquid source chemical vapor deposition process for the preparation of a Ba-Sr-Ti oxide film

Cho, Yong Seok; Cho, Sung-Il; Heo, Jung-Shik; Moon, Sang Heup

doi:10.1007/bf02705410

Cited by 4 publications

(2 citation statements)

References 21 publications

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“…For example, BST is a candidate dielectric material for the fabrication of capacitors in modern dynamic random access memory (DRAM). [1][2][3][4] In spite of difficulties encountered in process control, metalorganic chemical vapor deposition (MOCVD) is considered to be one of promising methods for use in producing films because of its excellent step coverage and high deposition rates. Although considerable progress has been made in the preparation of BST thin films using MOCVD, the selection of metalorganic compounds continues to be the key problem in the design of the process.…”

Section: Introductionmentioning

confidence: 99%

“…[5][6][7] The titanium source compound is generally thought to strongly influence the step coverage of a deposited film. 1) Ti precursors that are commonly used in film deposition are mainly alkoxides and -diketonates, such as Ti(O-iPr) 4 and Ti(O-iPr) 2 (dpm) 2 . Ti(O-iPr) 2 (dpm) 2 is widely used in the preparation of BST films because of its affinity for the typically-used Ba and Sr sources, Ba(dpm) 2 and Sr(dpm) 2 .…”

Section: Introductionmentioning

confidence: 99%

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Thermal Decomposition of Ti(O–iPr)₂(dpm)₂ in the Gas Phase

Heo

Cho

Kim

et al. 2005

Jpn. J. Appl. Phys.

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Scaling of metal-oxide-semiconductor (MOS) transistors to smaller dimensions has been a key driving force in the IC industry. As we approach the sub-quarter micron regime, a whole new set of problems regarding the device performance arises. One of the major concerns is the high gate leakage current. To address this problem, a lot of effort has been concentrated on the use of the so-called "high-K dielectrics" as gate insulators. However, the implications of using these materials on the electrical performance of MOS devices need to be studied. This work is an effort towards the same. There has also been a lot of discussion about the trade-offs related to the use of retrograde channel profiles in deep sub-micron transistors. It is also shown in this work that a retrograde profile can be optimized to have an advantage over uniform doping.

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Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Thermal Decomposition of Ti(O–iPr)₂(dpm)₂ in the Gas Phase

Heo

Cho

Kim

et al. 2005

Jpn. J. Appl. Phys.

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Adsorption and regeneration dynamic characteristics of methane and hydrogen binary system

Choi

Nam

Choi

et al. 2004

Korean J. Chem. Eng.

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Using Daqing natural sand packed tubular model and natural core, the injection rate is 1m/d and the experiment temperature is 45℃, studying binary system and ternary system interfacial tension changes of the produced liquid after betaine-polymer binary system and weak alkali-mahogany sulfonate-polymer dynamic absorb to the natural core and sand packed tubular model with oil or without oil by using TX-500 interfacial tensiometer. The results show that: The adsorption migration law of binary system and ternary system in the natural core is consistent with the natural sand packed tubular model, the surfactant front often shows the characteristics of piston propulsion. The interfacial tension of the natural sand packed tubular model without residual oil is relatively stable, and the interfacial tension of the natural sand packed tubular model with residual oil fluctuates up and down. In the a natural sand packed tubular models without oil and natural cores, the adsorption capacity of betaine binary system is 5.4 and 6.5 times than mahogany sulfonate ternary system respectively, in the a natural sand packed tubular models with oil, the adsorption capacity of betaine binary system is 1.3 times than mahogany sulfonate ternary system. Agreement interfacial tension of binary or ternary flooding system-crude oil in the reservoir is not all in the original ultra-low, but depend on the emulsification of ultra-low interfacial tension within a radius of injection well and synergy with other components can effectively improve the oil recovery.

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Metalorganic chemical vapor deposition of Sr x TiyO z thin films by using mixed metal precursorsO z thin films by using mixed metal precursors

Heo

Ryu

Cho

et al. 2006

Korean J. Chem. Eng.

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Thermodynamic analysis of liquid source chemical vapor deposition process for the preparation of a Ba-Sr-Ti oxide film

Cited by 4 publications

References 21 publications

Thermal Decomposition of Ti(O–iPr)₂(dpm)₂ in the Gas Phase

Thermal Decomposition of Ti(O–iPr)₂(dpm)₂ in the Gas Phase

Adsorption and regeneration dynamic characteristics of methane and hydrogen binary system

Metalorganic chemical vapor deposition of Sr x TiyO z thin films by using mixed metal precursorsO z thin films by using mixed metal precursors

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Thermodynamic analysis of liquid source chemical vapor deposition process for the preparation of a Ba-Sr-Ti oxide film

Cited by 4 publications

References 21 publications

Thermal Decomposition of Ti(O–iPr)2(dpm)2 in the Gas Phase

Thermal Decomposition of Ti(O–iPr)2(dpm)2 in the Gas Phase

Adsorption and regeneration dynamic characteristics of methane and hydrogen binary system

Metalorganic chemical vapor deposition of Sr x TiyO z thin films by using mixed metal precursorsO z thin films by using mixed metal precursors

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Product

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Thermal Decomposition of Ti(O–iPr)₂(dpm)₂ in the Gas Phase

Thermal Decomposition of Ti(O–iPr)₂(dpm)₂ in the Gas Phase