Thermodynamic assessment of the C–Si–Zr system

Chen, H.M.; Xiang, Yanhong; Wang, S.; Zheng, Feng; Liu, L.B.; Jin, Zhanpeng

doi:10.1016/j.jallcom.2008.06.086

Cited by 36 publications

(17 citation statements)

References 17 publications

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“…The metastable phase of Zr 4 Si is also possible to be formed [15,17,18]. Zr 5 Si 3 C x is the only reported stable ternary phase [11,18,21]. The data obtained here were matched with the above known phases, as shown in Fig.…”

Section: Resultssupporting

confidence: 81%

“…In addition, compounds other than the reported three phases developed. In published phase diagrams [11,17,18], Zr 3 Si, Zr 3 Si 2 , Zr 5 Si 4 , ZrSi, and ZrSi 2 are stable compounds in a Zr-Si-C system. The metastable phase of Zr 4 Si is also possible to be formed [15,17,18].…”

Section: Resultsmentioning

confidence: 99%

“…In published phase diagrams [11,17,18], Zr 3 Si, Zr 3 Si 2 , Zr 5 Si 4 , ZrSi, and ZrSi 2 are stable compounds in a Zr-Si-C system. The metastable phase of Zr 4 Si is also possible to be formed [15,17,18]. Zr 5 Si 3 C x is the only reported stable ternary phase [11,18,21].…”

Section: Resultsmentioning

confidence: 99%

See 2 more Smart Citations

Microstructures of laser bonded SiC ceramics with Zr interlayers

Jung

Kim

et al. 2014

Journal of Nuclear Materials

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Section: Resultssupporting

confidence: 81%

Section: Resultsmentioning

confidence: 99%

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Microstructures of laser bonded SiC ceramics with Zr interlayers

Jung

Kim

et al. 2014

Journal of Nuclear Materials

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“…[22][23][24][25][26] In this paper, the stability between Zr layer and SiC substrate, initial temperature of reaction, interface reactions, surface topography, initial phases formation and phase evolution under vacuum annealing between 600 and 850 C were investigated by Rutherford backscattering spectrometry (RBS), X-ray diffraction (XRD), secondary electron microscopy (SEM) and atomic force microscopy (AFM). The ternary EHF model was applied and the initial phases to form in the Zr/SiC interface predicted and compared with the experimental results.…”

mentioning

confidence: 99%

“…Chen et al 24 provided a complete thermodynamic analysis of the Zr-Si-C system. The Gibbs free energies of formation and the calculated effective free energies of ZrC and Zr silicides Fig.…”

mentioning

confidence: 99%

Surface and interface reaction analysis of Zr films deposited on 6H-SiC after thermal annealing

et al. 2016

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Zr films (130 nm) were deposited on a 6H-SiC substrate at room temperature by sputter deposition. The interface solid-state reactions due to high vacuum thermal annealing between 600 C and 850 C for 30 min were investigated by Rutherford backscattering spectrometry (RBS) and X-ray diffraction (XRD).The surface morphology evolution due to thermal annealing was investigated and quantified using atomic force microscopy (AFM) and secondary electron microscopy (SEM). RBS analysis indicated that the as-deposited sample had a thin intermixed region consisting of ZrC and Zr 2 Si. The phases formed at each temperature were identified by XRD analysis. At temperatures of 700 C and above, Zr reacted with the SiC substrate and formed a mixed layer of Zr carbide (ZrC) and Zr silicides (Zr 2 Si, ZrSi 2 and Zr 5 Si 3 ).The surface morphology from SEM analysis revealed a homogeneous Zr surface which varied with annealing temperature with the appearance of clusters on the Zr surface. AFM analysis revealed that the R RMS surface roughness decreased from the as-deposited value of 1.65 nm after annealing at 700 C and then increased at higher temperatures due to coalescing of the surface granules in the Zr layer. It has also been demonstrated that the obtained experimental results between Zr and SiC have a good correlation with the ternary EHF model with regards to initial phases formed in the interface.

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Comparison of the adsorption of thin zirconium and titanium oxides films on the 6H‐SiC(0001) surface

Idczak

Skiścim

Markowski

2011

Cryst. Res. Technol.

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In this work, adsorption of Ti and Zr on the 6H‐SiC(0001) surface under the oxygen pressure of about 5×10−6 Pa was studied. The topography, the chemical composition and the thermal stability were investigated using the X‐ray photoelectron spectroscopy (XPS) and scanning tunneling microscopy (STM). The results show that deposition of titanium oxide onto the SiC surface results in island growth (Volmer–Weber type), which was clearly seen on STM images, whereas Zr oxides adsorb, rather uniformly, in an almost layer‐by‐layer mode. XPS study shows that titanium occurs in different oxidation states, while in case of Zr metallic and dioxide components dominate. (© 2012 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

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Thermodynamic assessment of the C–Si–Zr system

Cited by 36 publications

References 17 publications

Microstructures of laser bonded SiC ceramics with Zr interlayers

Microstructures of laser bonded SiC ceramics with Zr interlayers

Surface and interface reaction analysis of Zr films deposited on 6H-SiC after thermal annealing

Comparison of the adsorption of thin zirconium and titanium oxides films on the 6H‐SiC(0001) surface

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