Rhombohedral boron monosulfide (r-BS) with a layer stacking
structure
is a promising electrocatalyst for an oxygen evolution reaction (OER)
within an alkaline solution. We investigated the catalytic mechanisms
at the r-BS electrode/alkaline medium interface for an OER using hybrid
solvation theory based on the first-principles method combined with
classical solution theory. In this study, we elucidate the activities
of the OER at the outermost r-BS sheet with and without various surface
defects. The Gibbs free energies along the OER path indicate that
the boron vacancies at the first and second layers of the r-BS surface
(VB1 and VB2) can promote the OER. However,
we found that the VB1 is easily occupied by the oxygen
atom during the OER, degrading its electrocatalytic performance. In
contrast, VB2 is suitable for the active site of the OER
due to its structure stability. Next, we applied a bias voltage with
the OER potential to the r-BS electrode. The bias voltage incorporates
the positive excess surface charge into pristine r-BS and VB2, which can be understood by the relationship between the OER potential
and potentials of zero charge at the r-BS electrode. Because the OH– ions are the starting point of the OER, the positively
charged surface is kinetically favorable for the electrocatalyst owing
to the attractive interaction with the OH– ions.
Finally, we qualitatively discuss the flat-band potential at a semiconductor/alkaline
solution interface. It suggests that p-type carrier doping could promote
the catalytic performance of r-BS. These results explain the previous
measurement of the OER performance with the r-BS-based electrode and
provide valuable insights into developing a semiconductor electrode/water
interface.