Thermodynamic considerations on interfacial reactivity concerning carrier transport characteristics in metal/p-Zn₃P₂ junctions

Abstract

Chemical reaction at the metal/semiconductor interfaces, which have a significant impact on carrier transport properties of electronic devices, can be systematically discussed based on chemical potential diagrams.

Reactive Epitaxial Formation of a Mg–P–Zn Ternary Semiconductor in Mg/Zn3P2 Solar Cells

“…The annealing at 573 K resulted in the high series resistance and disappearance of the rectification behavior. In our previous study, we have revealed that the annealing of Ag/p-Zn 3 P 2 /Ag up to 573 K makes no significant change to the I – V characteristics and the interface structure . Consequently, the changes of the diode parameters and increase of the series resistance imply that the heat treatment enhanced interdiffusion at the Mg/p-Zn 3 P 2 interface and varied the interfacial structure.…”

“…In our previous study, we have revealed that the annealing of Ag/p-Zn 3 P 2 /Ag up to 573 K makes no significant change to the I−V characteristics and the interface structure. 31 Consequently, the changes of the diode parameters and increase of the series resistance imply that the heat treatment enhanced interdiffusion at the Mg/p-Zn 3 P 2 interface and varied the interfacial structure. Particularly, the reduction of the ideality factor could reflect decrease in number of interface defects, which cause undesirable recombination of photoexcited carriers.…”

“…Preparation of Zn 3 P 2 Wafers. The Zn 3 P 2 bulk crystal ingots were grown by the physical vapor transport as described elsewhere, 31 using zinc shots (99.99%, Kojundo chemical laboratory) and red phosphorus flakes (99.9999%, Kojundo chemical laboratory) as starting materials. The ingots were then cut and diced into plates with area of 2 × 2 mm 2 and thickness of 1 mm.…”