Thermodynamic of intrinsic defects in β-Ga2O3

Study on PECVD-hetero-grown β-Ga2O3 thin film and temperature-modulated solar-blind UV photodetection

“…Oxygen vacancy is an important defect in Ga 2 O 3 films, and the oxygen vacancy concentration in turn determines the performance of the PDs [49][50][51][52]. We deconvolved O1s XPS spectra for the Ga 2 O 3 films into two separate peaks corresponding to the lattice oxygen (labeled as O I ) and oxygen vacancy (labeled as O II ), respectively.…”

Interfacial thermal transport of graphene/β-Ga2O3 heterojunctions: a molecular dynamics study with a self-consistent interatomic potential

“…In previous studies, several interatomic potentials for b-Ga 2 O 3 have been developed. [30][31][32][33] Bush et al 30 proposed a set of Ga and O parameters through fitting the lattice properties of a series of binary metal oxides. Blanco et al 31 developed a potential for studying the energy and migration of point defects in b-Ga 2 O 3 .…”

“…Blanco et al 31 developed a potential for studying the energy and migration of point defects in b-Ga 2 O 3 . And recently, a set of potential parameters for calculating the vibrational entropy of defective b-Ga 2 O 3 have been released by Wang et al 32 The shell model 34 is adopted in the above potentials, [30][31][32] having the advantage to determine the polarization properties of atoms. However, the requirement of a much smaller integration timestep for shell dynamics will cost a lot of computational power.…”

Liquid Ga–In–Sn Alloy Printing of GaInSnO Ultrathin Semiconductor Films and Controllable Performance Field Effect Transistors

“…The defects including oxygen vacancy and gallium vacancy etc. will be formed with the growth of Ga 2 O 3 , resulting in a low carrier concentration and n-type conductivity of natively grown Ga 2 O 3 . − For power electronic devices based on Ga 2 O 3 , the high carrier concentration and carrier mobility are essential. Doping provides a promising way to enhance the conductivity of native Ga 2 O 3 .…”