Thermodynamic Properties of Electron Gas in Semiconductor Nanowires

Davlatov, A. B.; Gulyamov, G.; Urinboev, Doston R.

doi:10.1007/s10909-023-02974-2

Cited by 4 publications

(2 citation statements)

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“…In III-V materials, the conduction band is strongly nonparabolic. A higher quantum confinement leads to larger electron energies that exceed the range of validity of the parabolic approximation and can result in significant errors both for the subband energy levels and for the dispersion relation [35,36,42]. It is known that in narrow-gap semiconductors, the energy band dispersion law is strongly nonparabolic.…”

Section: Methodsmentioning

confidence: 99%

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Unraveling the effects of non-parabolicity on electron energy levels in InP/InAs/InP heterostructures

Davlatov,

Gulyamov,

Nabiyev

et al. 2024

Phys. Scr.

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In this research, electron energy levels were calculated analytically using Nelson's formula, the shooting method, and Garrett's formula for effective mass. These calculations were performed for a rectangular finite deep potential well, focusing on the InP/InAs/InP heterostructure, which is a narrow-bandgap semiconductor system. Our results demonstrate that the nonparabolicity of the dispersion has a more significant effect on higher energy levels compared to lower ones, with deviations of up to 15% for the third energy level. An equation estimating the number of observable energy levels in the potential well is suggested, revealing that considering nonparabolicity leads to a 20% increase in the number of levels compared to the parabolic dispersion case. The relationship between the widths of infinite and finite potential wells for equivalent energy levels follows a linear behaviour, with bonding coefficients ranging from 95,93% to 97,49% and a maximum difference of 1.5% between parabolic and non-parabolic cases. The transcendental equation for the energy levels is linearized, yielding a fourth-order equation that provides results within 98% accuracy compared to the original equation. These findings contribute to the understanding of the energy distribution in InP/InAs/InP heterostructures with a view to their application in optoelectronic devices such as lasers, light-emitting diodes

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Section: Methodsmentioning

confidence: 99%

“…It is known that in narrow-gap semiconductors, the energy band dispersion law is strongly nonparabolic. For the energy dependence of the effective mass, we use the Nelson model [37][38][39]42], and the electron effective mass is determined by the following relation.…”

Section: Methodsmentioning

confidence: 99%