Thermodynamic Stability and Redistribution of Charges in Ternary AlGaN, InGaN, and InAlN Alloys

Deibuk, V. G.; Voznyi, A. V.

doi:10.1134/1.1944849

Cited by 40 publications

(9 citation statements)

References 21 publications

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“…Depending on the model and the theoretical method used, the results of the phase separation zone in the unconstrained case are quite different from one report to the other. At the growth temperature of 900 °C for InAlN, the reported immiscibility gaps were 12–88% , 14–70% , and 17–92% , which is in agreement with our results. For InGaN, at the growth temperature of 800 °C the phase separation zone determined by Karpov et al was between 10 and 80% indium composition which is also in agreement with our calculations (10–73%).…”

Section: Comparison With Other Studiessupporting

confidence: 92%

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Investigation of strain effects on phase diagrams in the ternary nitride alloys (InAlN, AlGaN, InGaN)

Mohamad

Béré

Chen

et al. 2017

Phys. Status Solidi A

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In this work, we used a modified Stillinger–Weber potential and a methodology of free energy calculation based on numerical computation of the configuration partition function of an alloy, to make a comprehensive study of the properties of group‐III nitride ternary compounds (InxGa1−xN; InxAl1−xN; AlxGa1−xN). The wurtzite structure was used; and the critical temperatures for the random ternary alloys are determined as 2717 K for InxAl1−xN, 1718 K for InxGa1−xN, and 177 K for AlxGa1−xN, respectively. Therefore, AlxGa1−xN has no unstable mixing region at typical growth temperatures around 1100 °C. In contrast, InxAl1−xN and InxGa1−xN exhibit a wide unstable region, which means that being thick layers, their stability as homogeneous alloys is probably limited. In agreement with other reports, it is also pointed out that the critical temperature Tc may be decreased when the layers are grown under strain. Although the compression and extension have the same effect below 1.5% strain, it is shown, for the first time, that when the compressive strain goes beyond, Tc abruptly increases in contrast to the case of tensile strain where it continues to decrease.

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Section: Comparison With Other Studiessupporting

confidence: 92%

“…The phase separation in InGaN and InAlN was investigated by various theoretical groups . Depending on the model and the theoretical method used, the results of the phase separation zone in the unconstrained case are quite different from one report to the other.…”

Section: Comparison With Other Studiesmentioning

confidence: 99%

Investigation of strain effects on phase diagrams in the ternary nitride alloys (InAlN, AlGaN, InGaN)

Mohamad

Béré

Chen

et al. 2017

Phys. Status Solidi A

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“…The observed composition modulations are unlikely to be due to spinodal decomposition as recent theoretical calculations suggest the stability of alloys with the studied compositions, 11 and as they seem to appear only in RFMBEgrown InAlN films. 5 Zhou et al 5 relate the In composition changes to a mechanism proposed by Goldman et al 12 which attributes vertically oriented superlattice formation to random fluctuations in alloy concentration at the start of film growth.…”

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confidence: 79%

Mechanism of compositional modulations in epitaxial InAlN films grown by molecular beam epitaxy

Sahonta

Dimitrakopulos

Kehagias

et al. 2009

Applied Physics Letters

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A mechanism for compositional modulations in InxAl1−xN films is described which considers growth kinetics during molecular beam epitaxy. InAlN crystalline films with various indium contents, grown on GaN or AlN buffer layers to create a variation in lattice mismatch conditions, were studied by transmission electron microscopy. Films comprise of columnar domains which are observed regardless of mismatch, with increasing indium concentration toward domain edges. We propose that indium is incorporated preferentially between adjacent dynamical InAlN platelets, owing to tensile strain generated upon platelet coalescence. The resulting In-rich boundaries are potential minima for further indium adatoms, creating a permanent indium composition gradient.

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“…5 As is known, understanding the microstructural characteristics is of fundamental importance for improving the device performance. 9, 10 Sadler et al 11 showed pits on the In x Al 1−x N surfaces by atomic force microscopy. However, so far, there have been only limited knowledge of In x Al 1−x N films due to the difficulty in obtaining high-quality In x Al 1−x N layers for the large difference in thermal stability between InN and AlN.…”

Section: The Origin and Evolution Of V-defects In In X Al 1−x N Epilamentioning

confidence: 99%

The origin and evolution of V-defects in InxAl1−xN epilayers grown by metalorganic chemical vapor deposition

Miao

et al. 2009

Applied Physics Letters

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Articles you may be interested inEffect of indium surfactant on stress relaxation by V-defect formation in GaN epilayers grown by metalorganic chemical vapor deposition J. Appl. Phys. 108, 093511 (2010); 10.1063/1.3487955 Strain effects on In x Al 1 − x N crystalline quality grown on GaN templates by metalorganic chemical vapor deposition J. Appl. Phys. 107, 043515 (2010); 10.1063/1.3305397 Indium migration paths in V-defects of InAlN grown by metal-organic vapor phase epitaxy Appl. Phys. Lett. 95, 071905 (2009); 10.1063/1.3204454 Study of defects evolution in GaN layers grown by metal-organic chemical vapor depositionNear-lattice-matched and highly compressive-strained In x Al 1−x N epilayers were grown on GaN templates by metalorganic chemical vapor deposition. The V-defects associated with screw-component threading dislocations ͑TDs͒ were found in all the In x Al 1−x N layers. Their origin and evolution were investigated through near-lattice-matched In 0.173 Al 0.827 N layers with different thicknesses. Furthermore, small V-defects not associated with TDs were also found in In x Al 1−x N layers with high In composition ͑x = 0.231͒. Stacking mismatch boundaries induced by lattice relaxation in In x Al 1−x N epilayers under large strain is believed to be another mechanism forming V-defects.

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Thermodynamic Stability and Redistribution of Charges in Ternary AlGaN, InGaN, and InAlN Alloys

Cited by 40 publications

References 21 publications

Investigation of strain effects on phase diagrams in the ternary nitride alloys (InAlN, AlGaN, InGaN)

Investigation of strain effects on phase diagrams in the ternary nitride alloys (InAlN, AlGaN, InGaN)

Mechanism of compositional modulations in epitaxial InAlN films grown by molecular beam epitaxy

The origin and evolution of V-defects in InxAl1−xN epilayers grown by metalorganic chemical vapor deposition

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