Thermodynamics and kinetics of solution combustion synthesis: Ni(NO3)2 + fuels systems

Amirkhanyan, Narine; Kharatyan, S. L.; Manukyan, Khachatur V.; Aprahamian, A.

doi:10.1016/j.combustflame.2020.07.038

Cited by 23 publications

(4 citation statements)

References 63 publications

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“…In addition, upon revisiting the above equation, it becomes evident that this desired pore quantity can be attained through careful control of various fuel (glycine) -oxidizer (metal nitrates) ratios. Similar investigations can be found in existing literature (Amirkhanyan et al, 2020;Shin et al, 2023). Nonetheless, adjusting the fuel quantity, whether increased or decreased, may lead to non-stoichiometry and the presence of residual carbon in the desired structure.…”

Section: Resultssupporting

confidence: 78%

Glycine-Assisted Synthesis of High Surface Area (FeMnCrCoZn)3O4 Microsheets

OZDEN,

ANIK

2023

EPSTEM

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To meet the current demands for energy storage and conversion, it is crucial to develop newly designed materials. Porous metal oxides with a high specific surface area and controllable porosity are promising electrode materials for electrochemical energy storage and conversion applications. Furthermore, porous materials offer a unique combination of structural, chemical and physical properties. In this study, porous high-entropy oxides (FeMnCrCoZn)₃O₄ were synthesized through soft chemistry route, employing glycine as a pore-forming agent, followed by calcination at various temperatures (500 °C, 600 °C and 700 °C) for 4h. The obtained samples were characterized by X-ray diffraction (XRD) and scanning electron microscopy (SEM) techniques. It was observed that the samples were successfully synthesized in porous microsheet morphology and as a single phase in the spinel crystal structure. Additionally, the effect of different calcination temperatures on the pore structure has been investigated.

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Section: Resultssupporting

confidence: 78%

Glycine-Assisted Synthesis of High Surface Area (FeMnCrCoZn)3O4 Microsheets

OZDEN,

ANIK

2023

EPSTEM

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“…The current contribution reports a novel rapid, simple, and low-temperature solution combustion synthesis (SCS) − process to deposit UO 2 thin films with ultrafine (5–10 nm) grain sizes to allow detailed investigations of irradiation-induced structural transformations. Irradiation with Ar 2+ ions (1.7 MeV energy, a fluence of up to 1 × 10 17 ions/cm 2 ) and an implantation depth of ∼1000 nm yielded a uniform distribution of atomic displacements within the UO 2 films while avoiding the formation of dislocation loops, cavities, and gas bubbles.…”

Section: Introductionmentioning

confidence: 99%

Irradiation-Driven Restructuring of UO₂ Thin Films: Amorphization and Crystallization

Majumdar

Manukyan

Dede

et al. 2021

ACS Appl. Mater. Interfaces

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Combustion synthesis in uranyl nitrate–acetylacetone–2-methoxyethanol solutions was used to deposit thin UO2 films on aluminum substrates to investigate the irradiation-induced restructuring processes. Thermal analysis revealed that the combustion reactions in these solutions are initiated at ∼160 °C. The heat released during the process and the subsequent brief annealing at 400 °C allow the deposition of polycrystalline films with 5–10 nm UO2 grains. The use of multiple deposition cycles enables tuning of the film thicknesses in the 35–260 nm range. Irradiation with Ar2+ ions (1.7 MeV energy and a fluence of up to 1 × 1017 ions/cm2) is utilized to generate a uniform distribution of atomic displacements within the films. X-ray fluorescence (XRF) and alpha-particle emission spectroscopy showed that the films were stable under irradiation and did not undergo sputtering degradation. X-ray photoelectron spectroscopy (XPS) showed that the stoichiometry and uranium ionic concentrations remain stable during irradiation. The high-resolution electron microscopy imaging and electron diffraction analysis demonstrated that at the early stages of irradiation (below 1 × 1016 ion/cm2) UO2 films show complete amorphization and beam-induced densification (sintering), resulting in a pore-free disordered film. Prolonged irradiation (5 × 1016 ion/cm2) is shown to trigger a crystallization process at the surface of the films that moves toward the UO2/Al interface, converting the entire amorphous material into a highly crystalline film. This work reports on an entirely different radiation-induced restructuring of the nanoscale UO2 compared to the coarse-grained counterpart. The preparation of thin UO2 films deposited on Al substrates fills an area of national need within the stockpile stewardship program of the National Nuclear Security Administration and fundamental research with actinides. The method reported in this work produces pure, robust, and uniform thin-film actinide targets for nuclear science measurements.

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“…Thin films of UO 2 are essential for understanding the mechanisms governing the structural changes that nuclear fuel undergoes during reactor operation. ,− ,− In particular, ion irradiation of thin films of UO 2 or analog (CeO 2 ) materials is a safe approach for modeling irradiation-induced structural changes. ,− Solution combustion synthesis (SCS) − coupled with electrospraying (or spin coating) − is one of the latest developments and the most straightforward method for preparing UO 2 films with tunable thicknesses. This process involves deposition of a thin layer of uranyl nitrate + acetylacetone + 2-methoxyethanol (or uranyl nitrate–glycine–water) solution on a substrate (e.g., aluminum), followed by 20 min of annealing at 350–550 °C.…”

Section: Introductionmentioning

confidence: 99%

Irradiation-enhanced Interactions at UO₂/Al₂O₃/Al Interfaces

et al. 2023

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Combustion synthesis is used to prepare thin UO 2 films on aluminum alloy substrates. This simple preparation method involves electrospraying uranyl nitrate + acetylacetone + 2methoxyethanol solution on the substrate, followed by a short annealing at 350 or 550 °C. The irradiation of films with a 40 Ar 2+ ion beam (energy of 1.7 MeV and fluences of 7.7 × 10 16 and 1.3 × 10 17 ions/cm 2 ) is conducted to investigate irradiation-induced restructuring processes. High-resolution transmission electron microscopy (TEM) and X-ray photoelectron spectroscopy (XPS) investigations show that the annealing temperature significantly influences the crystallinity and stability of materials during irradiation. A small amount of Mg in the alloy substrate diffuses into the amorphous Al 2 O 3 interfacial layer between the film and the substrate. Local thermal spikes from the incoming ions facilitate the irradiationinduced mixing of immiscible Al 2 O 3 and UO 2 for the materials prepared at 350 °C. This mass diffusion produces relatively large cavities at the interface. Selective diffusion of a more significant amount of Mg for the materials prepared at 550 °C suppresses the mixing of the Al 2 O 3 interlayer with the film but forms Mg y U 1−y O 2±x solid solutions during irradiation. Local thermal heating triggers the precipitation of a discontinuous crystalline MgO layer close to the film surface. The enhanced and selective diffusion of Mg into the film makes the materials prepared at 550 °C more robust and mechanically stable than those prepared at 350 °C.

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Thermodynamics and kinetics of solution combustion synthesis: Ni(NO3)2 + fuels systems

Cited by 23 publications

References 63 publications

Glycine-Assisted Synthesis of High Surface Area (FeMnCrCoZn)3O4 Microsheets

Glycine-Assisted Synthesis of High Surface Area (FeMnCrCoZn)3O4 Microsheets

Irradiation-Driven Restructuring of UO₂ Thin Films: Amorphization and Crystallization

Irradiation-enhanced Interactions at UO₂/Al₂O₃/Al Interfaces

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Thermodynamics and kinetics of solution combustion synthesis: Ni(NO3)2 + fuels systems

Cited by 23 publications

References 63 publications

Glycine-Assisted Synthesis of High Surface Area (FeMnCrCoZn)3O4 Microsheets

Glycine-Assisted Synthesis of High Surface Area (FeMnCrCoZn)3O4 Microsheets

Irradiation-Driven Restructuring of UO2 Thin Films: Amorphization and Crystallization

Irradiation-enhanced Interactions at UO2/Al2O3/Al Interfaces

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Irradiation-Driven Restructuring of UO₂ Thin Films: Amorphization and Crystallization

Irradiation-enhanced Interactions at UO₂/Al₂O₃/Al Interfaces