2008
DOI: 10.1109/ted.2008.2003027
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Thermodynamics and Transport Model of Charge Injection in Silicon Irradiated by a Pulsed Focused Laser

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Cited by 2 publications
(2 citation statements)
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“…The latter can also lead to the process of voids capturing and formation of new pores inside the new NPs of Si (this assumes negligible effect of surface tension of liquid Si if the new NPs are large enough). The process of emission of the electrons from NPs and related to this accumulation of the positive charge with subsequent Coulomb explosion of the NPs [38,39,53] are not taken into account in our modeling.…”
Section: Resultsmentioning
confidence: 99%
“…The latter can also lead to the process of voids capturing and formation of new pores inside the new NPs of Si (this assumes negligible effect of surface tension of liquid Si if the new NPs are large enough). The process of emission of the electrons from NPs and related to this accumulation of the positive charge with subsequent Coulomb explosion of the NPs [38,39,53] are not taken into account in our modeling.…”
Section: Resultsmentioning
confidence: 99%
“…To ensure that the link is always created, it is possible to irradiate the antifuse link with more power than needed as well as to verify the link resistance in a closed loop electrical measurement [3,4]. However, those techniques are not always required because it is safer to minimize the optical power on the chip to prevent its damage [5][6][7]. Furthermore, the electrical measurement is time consuming and sometimes impossible to perform because of the circuit design.…”
Section: Introductionmentioning
confidence: 99%