2007
DOI: 10.1134/s0036029507020036
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Thermodynamics of strontium tungstate evaporation

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Cited by 11 publications
(7 citation statements)
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“…At high temperatures, the relative elemental abundances in the system play a larger role in determining the vapor composition, so that silicon (the most abundant element in the system after oxygen) will dominate the vapor as SiO, followed by O 2 , O, and the moderately volatile Mg-and Fe-bearing gases, which typically comprise 1%-10% of the vapor (e.g., Fe-oxides in the melt dissociate into Fe, FeO, O, and O 2 in the vapor; Kazenas & Tagirov 1995). The temperature of the transition between a SiO-dominated regime and a Na-and/or oxygen fugacity as a function of temperature.…”
Section: Chemical Speciation Of Saturated Silicate Vapormentioning
confidence: 99%
“…At high temperatures, the relative elemental abundances in the system play a larger role in determining the vapor composition, so that silicon (the most abundant element in the system after oxygen) will dominate the vapor as SiO, followed by O 2 , O, and the moderately volatile Mg-and Fe-bearing gases, which typically comprise 1%-10% of the vapor (e.g., Fe-oxides in the melt dissociate into Fe, FeO, O, and O 2 in the vapor; Kazenas & Tagirov 1995). The temperature of the transition between a SiO-dominated regime and a Na-and/or oxygen fugacity as a function of temperature.…”
Section: Chemical Speciation Of Saturated Silicate Vapormentioning
confidence: 99%
“…It is well known [13] that alkali metal polyphosphates have a relatively low melting temperature and high vapor pressure on heating. This has made it possible to suggest that sodium polyphosphate may be used as a component for combined technological action.…”
Section: Introductionmentioning
confidence: 99%
“…•10 -9 ;~2•10 -7 ;~3•10 -6 ,~4•10 -5 ;~2.6•10 -3 and~8.5•10 -2 Pa at temperatures, K: 1700, 1800, 1900, 2000, 2200 and 2400, 2.6•10 -3~8 .5•10 -2 respectively [4]. The vapor pressure, observed above used oxides, is as follows [5]. At 300 K (practically corresponding to the optimum temperature for the synthesis of titanium carbide), vapor pressure of titanium oxide (TiO2) reaches~1 Pa; at 2000 K (nearly corresponding to the optimum temperature for the synthesis of titanium diboride), it is equal to~0.01 Pa.…”
Section: Resultsmentioning
confidence: 99%