Thermodynamics of ZrC — Equilibrium Condition Calculated for Deposition from a  CH 4 ‐ ZrCl4 ‐  H 2 Gaseous Mixture

Abstract

Chemical vapor deposition of the nonstoichiometric zirconium carbide is computed by minimization of the Gibbs free energy of the system. Analytical expressions for the Gibbs free energy of formation of ZrxC1−x f.c.c. solid and liquid phases are set up, and the deposition diagram with “isostoichiometric curves” is presented as a function of ZrCl4 , CH4 , and H2 pressures in the input gas mixture.

Calculation and synthesis of ZrC by CVD from ZrCl4–C3H6–H2–Ar system with high H2 percentage

“…Several studies reported the CVD of zirconium carbide and carbon-zirconium carbide alloys [10][11][12][13][14][15][16][17][18]. The ZrC coatings are generally synthesized by zirconium halide [11,12] and hydrocarbons, such as CH 4 and C 3 H 6 [14,15].…”

Deposition Mechanism for Chemical Vapor Deposition of Zirconium Carbide Coatings

“…The carbon sources are CH 4 or a high‐carbon‐content hydrocarbon 8 . The process parameters have also been intensively studied, including the thermodynamics, carbon source effect, zirconium source effect, and hydrogen effect 6,8,11–13 …”

Morphologies and growth mechanisms of zirconium carbide films by chemical vapor deposition

“…12,15,17 Thermodynamic studies of the ZrC deposition process have also been carried out in previous studies. 13,18,19 To better control the ZrC deposition process, it is necessary to understand the deposition mechanism. However, the study has seldom been done to elucidate such a mechanism.…”