Thermoelastic action of pulse-periodic laser radiation on the surface of a solid

Аполлонов, В. В.; Prokhorov, A M; Khomich, V Yu; Chetkin, S A

doi:10.1070/qe1982v012n02abeh005473

Cited by 6 publications

(5 citation statements)

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“…In the case of uniform irradiation of the surface of a semiinfinite crystal, the power density that is required to heat up the surface from the initial temperature 0 to the final temperature is described by the following well-known formula (see, e.g. works [18,19]):…”

Section: Calculation Formulas For the Melting Thresholdmentioning

confidence: 99%

Dependence of the CdTe Melting Threshold on the Pulse Duration and Wavelength of Laser Radiation and the Parameters of Non-Equilibrium Charge Carriers

Veleschuk¹,

Vlasenko²,

Vlasenko³

et al. 2017

Ukr. J. Phys.

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The dependences of the melting threshold of CdTe under the pulsed laser irradiation on the radiation wavelength and the laser pulse duration p are calculated with regard for the nonequilibrium character of charge carriers. Three components of the energy released at the thermalization of excited carriers under the nanosecond laser irradiation of CdTe in the fundamental absorption region are considered: the component that dominates immediately after the excitation, and the components released at the nonradiative bulk and nonradiative surface recombinations. Together, they determine the depth of heat penetration into the crystal and, therefore, its melting threshold. It is shown that the CdTe melting threshold grows from 2.6 to 4.75 MW/cm 2 , when changes from 300 to 800 nm at p = 20 ns. The changes in the nonequilibrium charge carrier parameters (the surface recombination rate, lifetime, and diffusion depth) are found to vary the CdTe melting threshold by at least 30%. K e y w o r d s: cadmium telluride, pulsed laser irradiation.

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Section: Calculation Formulas For the Melting Thresholdmentioning

confidence: 99%

Dependence of the CdTe Melting Threshold on the Pulse Duration and Wavelength of Laser Radiation and the Parameters of Non-Equilibrium Charge Carriers

Veleschuk¹,

Vlasenko²,

Vlasenko³

et al. 2017

Ukr. J. Phys.

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show abstract

“…Metallurgical production technology ensures their stability and reproducibility, long service life, and high reliability. One of the first mirrors based on porous structures [7,8,9,10] is shown in Fig. 3.…”

Section: Analysis Of the Data Inmentioning

confidence: 99%

Liquid Alkali Metal Coolants in High Power Optics

Vv¹

2017

SF J Laser Optics

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“…В известных нам задачах, связанных с описанием распределения температуры по пластинам (см ., к примеру, [1][2][3][4][5][6][7][8][9][10][11][12][13][14] и, в частности, монографию [15], в которой пластинам посвящена целая глава), мы не обнаружили решения той задачи, о которой пойдёт речь в настоящей статье .…”

Section: Introductionunclassified

“…С другой стороны, энергия электрона во внешнем электромагнитном поле определяется в виде (см . [16]): (5) где p = mv -импульс электрона, m -его масса .…”

Section: Introductionunclassified

“…Благодаря дисперсии (5), где фигурирует лишь электрическая составляющая ЭМ поля в виде потенциала φ, которая и будет определять все описываемые далее тепловые свойства материала, мы имели бы право положить H = 0 . Это условие, однако, совсем не обязательно, поскольку согласно соотношениям (3) и (4), дисперсию электрона (5) в поле действия световой волны на полусегменте 0 ≤ x < ξ можно представить в виде: (6) В силу же закона Бугера-Ламберта (1) электромагнитное поле должно быстро исчезать в глубь пластины (длина волны стремится к бесконечности) .…”

Section: Introductionunclassified

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