Thermoelectric Characterization and Power Generation Using a Silicon-on-Insulator Substrate

Lee, Jae-Ho; Kim, Sang-Bum; Marconnet, Amy; Zandt, M.A.A. in 't; Asheghi, Mehdi; Wong, H.-S. Philip; Goodson, Kenneth E.

doi:10.1109/jmems.2011.2175704

Cited by 12 publications

(6 citation statements)

References 13 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…[14][15][16] Here, we measure the temperature gradient by positioning the temperature sensing metal line at the same distance as the hot junction of Ge 2 Sb 2 Te 5 from the heater. This eliminates the heat spreading calibration step required in our previous work 12 and facilitates temperature dependent measurements. The temperature dependence of Seebeck coefficient is explained by different models at each phase, including the effective medium theory (EMT) for treating phase impurities.…”

Section: Introductionmentioning

confidence: 95%

“…The present work measures the Seebeck coefficient of 25-nm and 125-nm-thick Ge 2 Sb 2 Te 5 films between room temperature and 300 C using an experimental structure in which a buried oxide layer induces lateral temperature fields. 12,13 This measurement technique contrasts with approaches for capturing the thin-film Seebeck coefficients using a free-standing membrane and the associated challenging etching steps. [14][15][16] Here, we measure the temperature gradient by positioning the temperature sensing metal line at the same distance as the hot junction of Ge 2 Sb 2 Te 5 from the heater.…”

Section: Introductionmentioning

confidence: 99%

See 1 more Smart Citation

Phase purity and the thermoelectric properties of Ge2Sb2Te5 films down to 25 nm thickness

Lee

Kodama

Won

et al. 2012

Journal of Applied Physics

Self Cite

View full text Add to dashboard Cite

Light-induced off-diagonal thermoelectric effect via indirect optical heating of incline-oriented CaxCoO2 thin film Appl. Phys. Lett. 100, 181907 (2012) Thermal artifact on the spin Seebeck effect in metallic thin films deposited on MgO substrates J. Appl. Phys. 111, 07B106 (2012) Evolution of structural and thermoelectric properties of indium-ion-implanted epitaxial GaAs Appl. Phys. Lett. 100, 102101 (2012) Interplay of point defects, biaxial strain, and thermal conductivity in homoepitaxial SrTiO3 thin films Thermoelectric phenomena strongly influence the behavior of chalcogenide materials in nanoelectronic devices including phase-change memory cells. This work uses a novel silicon-oninsulator experimental structure to measure the phase and temperature-dependent Seebeck and Thomson coefficients of Ge 2 Sb 2 Te 5 films including the first data for films of thickness down to 25 nm. The Ge 2 Sb 2 Te 5 films annealed at different temperatures contain varying fractions of the amorphous and crystalline phases which strongly influence the thermoelectric properties. The Seebeck coefficient reduces from 371 lV/K to 206 lV/K as the crystalline fraction increases by a factor of four as quantified using x-ray diffraction. The data are consistent with modeling based on effective medium theory and suggest that careful consideration of phase purity is needed to account for thermoelectric transport in phase change memory. V C 2012 American Institute of Physics.

show abstract

Section: Introductionmentioning

confidence: 95%

Section: Introductionmentioning

confidence: 99%

Phase purity and the thermoelectric properties of Ge2Sb2Te5 films down to 25 nm thickness

Lee

Kodama

Won

et al. 2012

Journal of Applied Physics

Self Cite

View full text Add to dashboard Cite

show abstract

“…The symmetry of the sample reduces the computation time by using only a quarter of the sample domain. The simulation considers 0.56 and 0.37 at room temperature for the cross-plane and in-plane crystalline thermal conductivity values and 0.18 for the thermal conductivity of the amorphous phase. − A thermal boundary resistance of 0.9 was assumed between the GST and the silicon layer . Further, the crystallite sizes of 14 and 27 nm for the face-centered cubic (fcc) and hexagonal close-packed (hcp) crystalline phases were estimated from the full width at half-maximum approach on the XRD peaks of annealed GST at 170 and 350 °C, respectively.…”

Section: Optoelectrical Modeling Of Two-dimensional 4-bit Gst-based M...mentioning

confidence: 99%

Phase Change Dynamics and Two-Dimensional 4-Bit Memory in Ge₂Sb₂Te₅ via Telecom-Band Encoding

et al. 2020

Self Cite

View full text Add to dashboard Cite

As modern computing gets continuously pushed up against the von Neumann Bottleneck -limiting the ultimate speeds for data transfer and computation-new computing methods are needed in order to bypass this issue and keep our computer's evolution moving forward, such as hybrid computing with an optical co-processor, all-optical computing, or photonic neuromorphic computing. In any of these protocols, we require 1 arXiv:1911.03536v1 [physics.app-ph] 7 Oct 2019 an optical memory: either a multilevel/accumulator memory, or a computational memory. Here, we propose and demonstrate a 2-dimensional 4-bit fully optical non-volatile memory using Ge 2 Sb 2 Te 5 (GST) phase change materials, with encoding via a 1550 nm laser. Using the telecom-band laser, we are able to reach deeper into the material due to the low-loss nature of GST at this wavelength range, hence increasing the number of optical write/read levels compared to previous demonstrations, while simultaneously staying within acceptable read/write energies. We verify our design and experimental results via rigorous numerical simulations based on finite element and nucleation theory, and we successfully write and read a string of characters using direct hexadecimal encoding.

show abstract

“…Suh et al 70 used electrothermal simulations to demonstrate that, by carefully selecting PCM electrode materials based on Seebeck coefficient, thermoelectric heating can significantly reduce programming current. Lee et al 140 recently developed SOI structures to characterize the thermoelectric power generated at such interfaces, specifically for TiW-SbTe.…”

Section: Thermoelectric Transportmentioning

confidence: 99%

Thermal Transport in Phase Change Memory Materials

Bozorg-Grayeli

Reifenberg

Asheghi

et al. 2013

Annual Rev Heat Transfer

Self Cite

View full text Add to dashboard Cite

Phase change memory uses brief pulses of electrical current to induce phase transitions in chalcogenide material regions with dimensions near or even far below 50 nm. The strongly differing electrical conductivities of the crystalline and amorphous phases allow data storage at densities in excess of terabits per square inch. Nanoscale conduction heat transfer governs the figures of merit in these devices, which include the energy and time required for switching, and has received much attention through both measurements and simulations over the last two decades. This chapter reviews the recent progress on thermal conduction phenomena relevant for phase change memory, including a summary of the physical mechanisms involved as well as the most useful simulation and measurement techniques. Experimental work has focused on separating the intrinsic and boundary resistances of thin film phase change materials, as well as the individual contributions of electrons and phonons to the effective conductivity of the hexagonal crystalline phase. Simulations have focused on improving device geometries and switching characteristics, and continue to need improvements in the areas of crystallization modeling and the impact of phase distribution on electrical and thermal transport. Future research requires a more detailed understanding of electron-phonon coupling and its impact on electrical and thermal conduction in the crystalline phase, as well as greater insight into thermoelectric transport and its impact on device behavior. This progress will be critical for the development of innovative memory strategies including multibit storage.

show abstract

Thermoelectric Characterization and Power Generation Using a Silicon-on-Insulator Substrate

Cited by 12 publications

References 13 publications

Phase purity and the thermoelectric properties of Ge2Sb2Te5 films down to 25 nm thickness

Phase purity and the thermoelectric properties of Ge2Sb2Te5 films down to 25 nm thickness

Phase Change Dynamics and Two-Dimensional 4-Bit Memory in Ge₂Sb₂Te₅ via Telecom-Band Encoding

Thermal Transport in Phase Change Memory Materials

Contact Info

Product

Resources

About

Thermoelectric Characterization and Power Generation Using a Silicon-on-Insulator Substrate

Cited by 12 publications

References 13 publications

Phase purity and the thermoelectric properties of Ge2Sb2Te5 films down to 25 nm thickness

Phase purity and the thermoelectric properties of Ge2Sb2Te5 films down to 25 nm thickness

Phase Change Dynamics and Two-Dimensional 4-Bit Memory in Ge2Sb2Te5 via Telecom-Band Encoding

Thermal Transport in Phase Change Memory Materials

Contact Info

Product

Resources

About

Phase Change Dynamics and Two-Dimensional 4-Bit Memory in Ge₂Sb₂Te₅ via Telecom-Band Encoding