2020
DOI: 10.1002/aelm.201901288
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Thermoelectric Characterization Platform for Electrochemically Deposited Materials

Abstract: Successful optimization of the thermoelectric (TE) performance of materials, described by the figure of merit zT, is a key enabler for its application in energy harvesting or Peltier cooling devices. While the zT value of bulk materials is accessible by a variety of commercial measurement setups, precise determination of the zT value for thin and thick films remains a great challenge. This is particularly relevant for films synthesized by electrochemical deposition, where the TE material is deposited onto an e… Show more

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Cited by 3 publications
(3 citation statements)
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“…This preparation technique of PowderMEMS is applicable to the preparation of TE materials with following requirements: 1) both the TE matrix and the binder have the same sign of the Seebeck coefficient; and 2) the binder has a lower melting temperature than the TE matrix. According to these preparation rules, varying TE materials including metallic and semi-metallic compounds (e.g., Te-free MgSbBi, [66] CoNi, [67] SnSe, [47] and Half-Heusler [68] ) can be utilized for the fabrication of TE films and pillars. [66,67] The availability of material freedom opens up an unexceptionally wide range of possible TE applications.…”
Section: Microelectromechanical-systems Compatibility and Microstruct...mentioning
confidence: 99%
See 1 more Smart Citation
“…This preparation technique of PowderMEMS is applicable to the preparation of TE materials with following requirements: 1) both the TE matrix and the binder have the same sign of the Seebeck coefficient; and 2) the binder has a lower melting temperature than the TE matrix. According to these preparation rules, varying TE materials including metallic and semi-metallic compounds (e.g., Te-free MgSbBi, [66] CoNi, [67] SnSe, [47] and Half-Heusler [68] ) can be utilized for the fabrication of TE films and pillars. [66,67] The availability of material freedom opens up an unexceptionally wide range of possible TE applications.…”
Section: Microelectromechanical-systems Compatibility and Microstruct...mentioning
confidence: 99%
“…According to these preparation rules, varying TE materials including metallic and semi-metallic compounds (e.g., Te-free MgSbBi, [66] CoNi, [67] SnSe, [47] and Half-Heusler [68] ) can be utilized for the fabrication of TE films and pillars. [66,67] The availability of material freedom opens up an unexceptionally wide range of possible TE applications.…”
Section: Microelectromechanical-systems Compatibility and Microstruct...mentioning
confidence: 99%
“…The most important performance measure of a thermoelectric material is its thermoelectric figure of merit zT = (S 2 σ κ −1 ) T, where S is the Seebeck coefficient; σ is the electrical conductivity; κ is the total thermal conductivity; and T is the absolute temperature. [27,28] The performance of thermoelectric materials has improved dramatically in recent years: for instance, zT was improved from around 1 [29] in bismuth telluride and bismuth selenide systems to 2.6 in SnSe single crystals. [30] Although the performance of thermoelectric materials has improved greatly, that has not necessarily led to a substantial improvement in the performance of the devices themselves.…”
Section: Introductionmentioning
confidence: 99%