Thermoelectric Devices: Solid-State Refrigerators and Electrical Generators in the Classroom

Winder, Edmund J.; Ellis, Arthur B.; Lisensky, George C.

doi:10.1021/ed073p940

Cited by 44 publications

(22 citation statements)

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“…37 A key reason to employ NS TE materials is to have a low k due to extensive phonon scattering at the grain boundaries. 38 The measured k (Fig. 7(d)) of the sample shows lower values than that of bulk ingot Bi 2 Te 3 (1.5 W mK À1 ).…”

Section: Resultsmentioning

confidence: 79%

“…It has been reported 39 that porosity might have played an important role which can be deduced by the low electrical conductivity. 38 Thus, the sufficient densification with smaller grain size decreases k, enhances s and S, giving really a high s/k for nanostructured Bi 2 Te 3 sintered by SPS, especially in the low temperature region. Thermal conductivity, k, is composed of lattice thermal conductivity, k L , and electronic thermal conductivity, k e (k ¼ k L + k e ).…”

Section: Resultsmentioning

confidence: 98%

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Synthesis, processing, and thermoelectric properties of bulk nanostructured bismuth telluride (Bi₂Te₃)

et al. 2012

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Bismuth telluride (Bi 2 Te 3 ) is the best-known commercially used thermoelectric material in the bulk form for cooling and power generation applications at ambient temperature. However, its dimensionless figure-of-merit-ZT around 1 limits the large-scale industrial applications. Recent studies indicate that nanostructuring can enhance ZT while keeping the material form of bulk by employing an advanced synthetic process accompanied with novel consolidation techniques. Here, we report on bulk nanostructured (NS) undoped Bi 2 Te 3 prepared via a promising chemical synthetic route. Spark plasma sintering has been employed for compaction and sintering of Bi 2 Te 3 nanopowders, resulting in very high densification (>97%) while preserving the nanostructure. The average grain size of the final compacts was obtained as 90 AE 5 nm as calculated from electron micrographs. Evaluation of transport properties showed enhanced Seebeck coefficient (À120 mV K À1 ) and electrical conductivity compared to the literature state-of-the-art (30% enhanced power factor), especially in the low temperature range. An improved ZT for NS bulk undoped Bi 2 Te 3 is achieved with a peak value of $1.1 at 340 K.

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Section: Resultsmentioning

confidence: 79%

Section: Resultsmentioning

confidence: 98%

Synthesis, processing, and thermoelectric properties of bulk nanostructured bismuth telluride (Bi₂Te₃)

et al. 2012

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“…However, typical thermoelectric semiconductor materials including bismuth telluride are expensive, chemically unstable and relatively difficult to process, yielding the limited use for thermoelectric devices. 3,4 More recently, the thermoelectric property of graphene and its derivatives became a rising research topic because of the promising performances and tailorability. Previous theoretical works on the thermoelectric property of graphene demonstrated that the calculated ZT could be as high as 4 with Seebeck coefficient of more than 500 μV/K.…”

Section: Introductionmentioning

confidence: 99%

Controlled oxidation level of reduced graphene oxides and its effect on thermoelectric properties

Choi

Lee

et al. 2014

Macromol. Res.

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We investigated the thermoelectric properties of reduced graphene oxide (rGO) as a function of the oxidation level of rGO. rGO among graphene derivatives was selected as a thermoelectric material since rGO bucky paper shows low thermal conductivity due to the phonon scattering at the junctions of rGO nanoplatelets. The oxdation level of rGO was controlled by differing the amount of chemical reductant (hydrazine) used to reduce graphene oxide (GO) to rGO, which correspondingly affected the electrical conductivity and Seebeck coefficient of rGO film. In this study, the maximum of figure of merit (ZT) was found to reach to 1.1×10 -4 at 298 K for rGO reduced with the hydrazine of 1000 μL. These results provide the first experimental evidence that the thermoelectric performance of graphene and its derivative can be controlled by the oxidation level of graphitic nanoplatelets.

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“…1, is constructed of an array of p-type and n-type TE columns bonded between two ceramic plates [6]. These columns are connected electrically in series to form a chain of p-n junctions but thermally in parallel.…”

Section: Introductionmentioning

confidence: 99%

Barrier/bonding layers on bismuth telluride (Bi2Te3) for high temperature thermoelectric modules

Lin

Wesolowski

Lee

2011

J Mater Sci: Mater Electron

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In this research, a fundamental study is conducted to identify the materials and develop the processes for producing barrier/bonding composite on Bi 2 Te 3 for high temperature thermoelectric applications. The composite must meet four basic requirements: (a) prevent interdiffusion between the electrode material, for our design, silver(Ag) and Bi 2 Te 3 , (b) bond well to Bi 2 Te 3 , (c) bond well to Ag electrode, and (d) do not themselves diffuse into Bi 2 Te 3 . The composites investigated include palladium (Pd), nickel/gold (Ni/Au), Ag, and titanium/gold (Ti/Au). After annealing at 250°C for 200 h, only the Ti/Au design meets all four requirements. The thickness of Ti and Au, respectively, is only 100 nm. Other than meeting these four requirements, the Ti/Au layers exhibit excellent step coverage on the rough Bi 2 Te 3 surface even after the annealing process.

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Thermoelectric Devices: Solid-State Refrigerators and Electrical Generators in the Classroom

Abstract: Thermoelectric devices provide an engaging high-tech demonstration suitable for illustrating thermodynamic principles in the classroom.

Cited by 44 publications

References 0 publications

Synthesis, processing, and thermoelectric properties of bulk nanostructured bismuth telluride (Bi₂Te₃)

Synthesis, processing, and thermoelectric properties of bulk nanostructured bismuth telluride (Bi₂Te₃)

Controlled oxidation level of reduced graphene oxides and its effect on thermoelectric properties

Barrier/bonding layers on bismuth telluride (Bi2Te3) for high temperature thermoelectric modules

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Thermoelectric Devices: Solid-State Refrigerators and Electrical Generators in the Classroom

Abstract: Thermoelectric devices provide an engaging high-tech demonstration suitable for illustrating thermodynamic principles in the classroom.

Cited by 44 publications

References 0 publications

Synthesis, processing, and thermoelectric properties of bulk nanostructured bismuth telluride (Bi2Te3)

Synthesis, processing, and thermoelectric properties of bulk nanostructured bismuth telluride (Bi2Te3)

Controlled oxidation level of reduced graphene oxides and its effect on thermoelectric properties

Barrier/bonding layers on bismuth telluride (Bi2Te3) for high temperature thermoelectric modules

Contact Info

Product

Resources

About

Synthesis, processing, and thermoelectric properties of bulk nanostructured bismuth telluride (Bi₂Te₃)

Synthesis, processing, and thermoelectric properties of bulk nanostructured bismuth telluride (Bi₂Te₃)