``Thermoelectric Effect'' of Hot Carriers

Conwell, E. M.; Zucker, J.

doi:10.1063/1.1714448

Cited by 22 publications

(8 citation statements)

References 7 publications

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“…The main advances in the understanding of these thermoelectric properties came from the Boltzmann transport theory 23,27,28 . In particular, taking into account the scattering of phonons at boundaries increases S due to filtering or quantum confinement of free carriers 29–31 .…”

Section: Introductionmentioning

confidence: 99%

Enhancing the Seebeck effect in Ge/Si through the combination of interfacial design features

Nadtochiy

Kuryliuk

Strelchuk

et al. 2019

Sci Rep

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Due to their inherent physical properties, thin-film Si/SiGe heterostructures have specific thermal management applications in advanced integrated circuits and this in turn is essential not only to prevent a high local temperature and overheat inside the circuit, but also generate electricity through the Seebeck effect. Here, we were able to enhance the Seebeck effect in the germanium composite quantum dots (CQDs) embedded in silicon by increasing the number of thin silicon layers inside the dot (multi-fold CQD material). The Seebeck effect in the CQD structures and multi-layer boron atomic layer-doped SiGe epitaxial films was studied experimentally at temperatures in the range from 50 to 300 K and detailed calculations for the Seebeck coefficient employing different scattering mechanisms were made. Our results show that the Seebeck coefficient is enhanced up to ≈40% in a 3-fold CQD material with respect to 2-fold Ge/Si CQDs. This enhancement was precisely modeled by taking into account the scattering of phonons by inner boundaries and the carrier filtering by the CQD inclusions. Our model is also able to reproduce the observed temperature dependence of the Seebeck coefficient in the B atomic layer-doped SiGe fairly well. We expect that the phonon scattering techniques developed here could significantly improve the thermoelectric performance of Ge/Si materials through further optimization of the layer stacks inside the quantum dot and of the dopant concentrations.

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Section: Introductionmentioning

confidence: 99%

Enhancing the Seebeck effect in Ge/Si through the combination of interfacial design features

Nadtochiy

Kuryliuk

Strelchuk

et al. 2019

Sci Rep

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“…Recently the study of thermoelectric power has attracted intensified interest both theoretically and experimentally in various systems: mesoscopic quantum dots 1,2 , quantum wires 3 , heterojunctions and quantum well structures [4][5][6][7][8][9][10][11] as well as bulk materials 11,12 . Almost all of the earlier theoretical treatments were based on the Boltzmann equation in analyzing the diffusion component of thermoelectric power in macroscopic systems [15][16][17]3 and the phonon-drag component of it 18,[7][8][9] . In a recent letter 11 Lei pointed out that thermoelectric power can be conveniently analysed entirely within the framework of balance equation approach.…”

Section: Introductionmentioning

confidence: 99%

Phonon-drag effects on thermoelectric power

Horing

Cui

1996

Phys. Rev. B

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We carry out a calculation of the phonon-drag contribution Sg to the thermoelectric power of bulk semiconductors and quantum well structures for the first time using the balance equation transport theory extended to the weakly nonuniform systems. Introducing wavevector and phononmode dependent relaxation times due to phonon-phonon interactions, the formula obtained can be used not only at low temperatures where the phonon mean free path is determined by boundary scattering, but also at high temperatures. In the linear transport limit, Sg is equivalent to the result obtained from the Boltzmann equation with a relaxation time approximation. The theory is applied to experiments and agreement is found between the theoretical predictions and experimental results. The role of hot-electron effects in Sg is discussed. The importance of the contribution of Sg to thermoelectric power in the hot-electron transport condition is emphasized. 72.15.Jf, 72.20.Pa, 72.20.Ht, 72.10.Bg

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“…The results so obtained lead to some interesting conclusions. (1) and expanding the isotropic part of the distribution function as (2) "…”

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confidence: 99%