Thermoelectric energy conversion in layered structures with strained Ge quantum dots grown on Si surfaces

Korotchenkov, О. A.; Nadtochiy, Andriy; Kuryliuk, Vasyl; Wang, Chin Chi; Li, Peiwen; Cantarero, A.

doi:10.1140/epjb/e2014-50074-8

Cited by 9 publications

(8 citation statements)

References 30 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…One way of increase the thermoelectric performance of these materials is to engineer their structure at the nanoscale in order to tailor the thermal conductivity of the lattice. This can be achieved through different routes, for instance, by developing superlattices of different materials, 24 nanowires, 25,26 phononic crystals with an increased phonon dispersion, 27 or ultra-thin membranes.…”

Section: Nanoscale Inorganic and Hybrid Materialsmentioning

confidence: 99%

Review—Towards the Next Generation of Thermoelectric Materials: Tailoring Electronic and Phononic Properties of Nanomaterials

Caballero-Calero

D’Agosta

2017

ECS J. Solid State Sci. Technol.

View full text Add to dashboard Cite

In this review article we present the most relevant outcomes of the joint project “Tailoring Electronic and Phononic Properties of Nanomaterials: Towards Improved Thermoelectricity (nanoTHERM)”, a Spanish research Consolider project focused on the understanding of the thermoelectric materials and the tailoring of both their electronic and phononic properties toward the optimization of the efficiency of thermoelectric devices working at low and high temperatures.

show abstract

Section: Nanoscale Inorganic and Hybrid Materialsmentioning

confidence: 99%

Review—Towards the Next Generation of Thermoelectric Materials: Tailoring Electronic and Phononic Properties of Nanomaterials

Caballero-Calero

D’Agosta

2017

ECS J. Solid State Sci. Technol.

View full text Add to dashboard Cite

show abstract

“…Prospects for the application of silicon wires to improve the functional parameters of lightemitting devices [4] and lithium-ion batteries [5] are actively studied. A separate direction of modern researches is the study of the capabilities of Si nanostructures to increase the efficiency of energy conversion in thermoelectric elements [6][7][8]. It is known that the efficiency of thermoelectric element is determined by a dimensionless quantity, the figure of merit [9]…”

Section: Introductionmentioning

confidence: 99%

Теплопровідність Si нанониток з аморфною SiO2 обо-лонкою: молекулярно-динамічний розрахунок

et al. 2021

View full text Add to dashboard Cite

Методом нерiвноважної молекулярної динамiки дослiджено процеси теплового транспорту в Si нанонитках, покритих оболонкою аморфного SiO2. Розглянуто вплив товщини аморфного шару, радiуса кристалiчного кремнiєвого ядра I температури на величину коефiцiєнта теплопровiдностi нанониток. Встановлено, що збiльшення товщини аморфної оболонки зумовлює зменшення теплопровiдностi Si/SiO2 нанониток типу ядро-оболонка. Результати також показують, що теплопровiднiсть Si/SiO2 нанониток при 300 К зростає зi збiльшенням площi поперечного перерiзу кристалiчного Si ядра. Виявлено, що температурна залежнiсть коефiцiєнта теплопровiдностi Si/SiO2 нанониток типу ядро-оболонка є суттєво слабшою, нiж в кристалiчних кремнiєвих нанонитках. Показано, що така вiдмiннiсть є результатом рiзних домiнуючих механiзмiв фононного розсiювання в нанонитках. Отриманi результати демонструють, що нанонитки Si/SiO2 є перспективним матерiалом для термоелектричних застосувань.

show abstract

“…Besides, in addition to the control and the modification of material properties that can be expected, elasa) Electronic mail: mykola.isaiev@univ-lorraine.fr tic stresses often arise as a result of technological processing of a crystalline solid, like: porous network formation 16,17 , nanostructuration 18,19 , amorphization 20,21 , nanoinclusion 22,23 . Additionally, other methods of heat fluxes control involving phononics membranes 24 , dislocations [25][26][27][28] , functionalization of surfaces by different coatings and shells 29,30 lead to generation of strongly heterogeneous fields of elastic stresses.…”

Section: Introductionmentioning

confidence: 99%

Thermal conductivity of strained silicon: Molecular dynamics insight and kinetic theory approach

Kuryliuk

Nepochatyi

Chantrenne

et al. 2019

Journal of Applied Physics

Self Cite

View full text Add to dashboard Cite

In this work, we investigated tensile and compression forces effect on the thermal conductivity of silicon. We used equilibrium molecular dynamics approach for the evaluation of thermal conductivity considering different interatomic potentials. More specifically, we tested Stillinger-Weber, Tersoff, Environment-Dependent Interatomic Potential and Modified Embedded Atom Method potentials for the description of silicon atom motion under different strain and temperature conditions. It was shown that Tersoff potential gives a correct trend of thermal conductivity with hydrostatic strain, while other potentials fails, especially when compression strain is applied. Additionally, we extracted phonon density of states and dispersion curves from molecular dynamics simulations. These data were used for direct calculations of thermal conductivity considering the kinetic theory approach. Comparison of molecular dynamics and kinetic theory simulations results as a function of strain and temperature allowed us to investigate the different factors affecting the thermal conductivity of strained silicon.

show abstract

Thermoelectric energy conversion in layered structures with strained Ge quantum dots grown on Si surfaces

Cited by 9 publications

References 30 publications

Review—Towards the Next Generation of Thermoelectric Materials: Tailoring Electronic and Phononic Properties of Nanomaterials

Review—Towards the Next Generation of Thermoelectric Materials: Tailoring Electronic and Phononic Properties of Nanomaterials

Теплопровідність Si нанониток з аморфною SiO2 обо-лонкою: молекулярно-динамічний розрахунок

Thermal conductivity of strained silicon: Molecular dynamics insight and kinetic theory approach

Contact Info

Product

Resources

About