Thermoelectric Materials—Strategies for Improving Device Performance and Its Medical Applications

Mohankumar, P.; Babu, V.; Subramanian, Arjun; Bandla, Aishwarya; Thakor, Nitish V.; Ramakrishna, Seeram; He, Wei

doi:10.3390/sci1020037

Cited by 13 publications

(11 citation statements)

References 87 publications

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“…(f) Cooling blanket designed for infants. Reprinted from ref under the terms of a Creative Commons Attribution (CC BY) License. Published 2019 MDPI.…”

Section: Device Designmentioning

confidence: 99%

“…The average life of thermoelectric refrigeration devices for medical use has exceeded 3 × 10 5 h, and the single point failure rate has been lower than 3 × 10 –8 h –1 Figure d–f illustrates some products based on thermoelectric refrigerators designed for medical use Figure d shows a modern benchtop polymerase chain reaction (PCR) system designed for DNA studies.…”

Section: Device Designmentioning

confidence: 99%

“…Figure d shows a modern benchtop polymerase chain reaction (PCR) system designed for DNA studies. It employs Bi 2 Te 3 -based Peltier devices as coolers, which can provide stable cooling Figure e shows a fully integrated lab-on-chip device as a micro-total analytical system (μTAS) designed for portable and on-site care devices (micro-PCR) .…”

Section: Device Designmentioning

confidence: 99%

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Advanced Thermoelectric Design: From Materials and Structures to Devices

2020

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The long-standing popularity of thermoelectric materials has contributed to the creation of various thermoelectric devices and stimulated the development of strategies to improve their thermoelectric performance. In this review, we aim to comprehensively summarize the state-of-the-art strategies for the realization of high-performance thermoelectric materials and devices by establishing the links between synthesis, structural characteristics, properties, underlying chemistry and physics, including structural design (point defects, dislocations, interfaces, inclusions, and pores), multidimensional design (quantum dots/wires, nanoparticles, nanowires, nano-or microbelts, few-layered nanosheets, nano-or microplates, thin films, single crystals, and polycrystalline bulks), and advanced device design (thermoelectric modules, miniature generators and coolers, and flexible thermoelectric generators). The outline of each strategy starts with a concise presentation of their fundamentals and carefully selected examples. In the end, we point out the controversies, challenges, and outlooks toward the future development of thermoelectric materials and devices. Overall, this review will serve to help materials scientists, chemists, and physicists, particularly students and young researchers, in selecting suitable strategies for the improvement of thermoelectrics and potentially other relevant energy conversion technologies.

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“…(f) Cooling blanket designed for infants. Reprinted from ref under the terms of a Creative Commons Attribution (CC BY) License. Published 2019 MDPI.…”

Section: Device Designmentioning

confidence: 99%

Section: Device Designmentioning

confidence: 99%

Section: Device Designmentioning

confidence: 99%

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Advanced Thermoelectric Design: From Materials and Structures to Devices

2020

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“…It includes two typical applications such as solid-state coolers and power generation. Since the thermoelectric cooler has no moving parts, it is favorable for cooling systems requiring low noise and non-vibration [6], Electricity can also be generated by the thermoelectric Bi 2 Te 3 -based alloys from areas where there is a temperature difference on each side. Human bodies can be a good energy source to scavenge the waste heat near room temperature.…”

Section: Introductionmentioning

confidence: 99%

Carrier Modulation in Bi2Te3-Based Alloys via Interfacial Doping with Atomic Layer Deposition

et al. 2020

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The carrier concentration in Bi2Te3-based alloys is a decisive factor in determining their thermoelectric performance. Herein, we propose a novel approach to modulate the carrier concentration via the encapsulation of the alloy precursor powders. Atomic layer deposition (ALD) of ZnO and SnO2 was performed over the Bi2Te2.7Se0.3 powders. After spark plasma sintering at 500 °C for 20 min, the carrier concentration in the ZnO-coated samples decreased, while the carrier concentration in the SnO2-coated samples increased. This trend was more pronounced as the number of ALD cycles increased. This was attributed to the intermixing of the metal ions at the interface. Zn2+ substituted for Bi3+ at the interface acted as an acceptor, while Sn4+ substituted for Bi3+ acted as a donor. This indicates that the carrier concentration can be adjusted depending on the materials deposited with ALD. The use of fine powders changes the carrier concentration more strongly, because the quantity of material deposited increases with the effective surface area. Therefore, the proposed approach would provide opportunities to precisely optimize the carrier concentration for high thermoelectric performance.

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“…Solid-state thermoelectric devices are reliable energy converters possessing no noise or vibration, as there are no mechanical moving parts and, therefore, need substantially less maintenance (Chen and Lin, 2019). This provides an edge for thermoelectric to secure an indispensable place in the field of automobile, medical and aerospace applications (MohanKumar et al, 2019). Thermoelectric materials are increasingly becoming more important due to their applications in thermoelectric power generation as heat harvesting and microelectronic cooling devices (Budak et al, 2009a).…”

Section: Introductionmentioning

confidence: 99%

Thermal Treatment Effects on the Thermoelectric Properties of Ni/Si/Si + Sb/Si/Si + Ge/Ni Multilayer Thin Films

Budak¹,

Yang²

2020

American Journal of Engineering and Applied Sciences

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The multilayer thermoelectric devices including Ni/200 layers of Si/Si + Sb/200 layers of Si/Si + Ge/Ni thin films were fabricated using electron beam and DC/RF magnetron sputtering deposition systems. The thickness measurements have been performed using Filmetrics UV thickness measurement system. The Au contacts at the bottom and top of the fabricated thermoelectric devices were measured as 100 nm for each side. Ni layer at the bottom is 108 nm and Ni layer at the top of the multilayer structures is 168 nm. The thickness of 200 layers of Si/Si + Ge thin film is 173 nm and the thickness of 200 layers of Si/Si + Sb thin film is 199 nm. The fabricated thermoelectric devices have total of 402 layers of thin films with the total thickness of 648 nm thickness excluding two Au contact layers. The prepared thin film devices were annealed at different temperatures for one hour to improve the thermoelectric properties. The current studied system has reached some remarkable values of Seebeck coefficients when the suitable annealing temperatures and the suitable operating temperatures of Seebeck measurement system were applied. The multilayer thin film system has reached the Seebeck coefficient of-344.8 μV/K when the annealed temperature was 100°C and the operating temperature was 320 K. One of the main problems with the thermoelectric devices is having higher temperature dissipation during the operation of the devices. Ni thin film was used in the fabrication process to remove excess of the heat as a heat sink from the thermoelectric devices. This will bring new approach for the high efficient thermoelectric devices. The goal of the manuscript is to improve the thermoelectric properties of the fabricated thin film thermoelectric devices using Ni thin films and the thermal treatment. The resistivity values decreased when the annealing temperatures increased. The highest power factor values were reached when the thermoelectric devices were annealed at 100°C. Mobility values increased when the suitable temperatures were applied for thermal treatment.

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Thermoelectric Materials—Strategies for Improving Device Performance and Its Medical Applications

Cited by 13 publications

References 87 publications

Advanced Thermoelectric Design: From Materials and Structures to Devices

Advanced Thermoelectric Design: From Materials and Structures to Devices

Carrier Modulation in Bi2Te3-Based Alloys via Interfacial Doping with Atomic Layer Deposition

Thermal Treatment Effects on the Thermoelectric Properties of Ni/Si/Si + Sb/Si/Si + Ge/Ni Multilayer Thin Films

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