Thermoelectric properties control of Half-Heusler compounds by lattice defects and interfaces introduced based on the close relationship with Heusler compounds

Abstract

Half-Heusler MNiSn (M=Ti, Zr, Hf) compounds are well-known, excellent n-type thermoelectric materials. The n-type Seebeck coefficients of ZrNiSn are reduced because of the precipitation of the metallic Heusler ZrNi2Sn phase. An excellent n-type Seebeck coefficient can be converted to p-type based on the vacancy site occupation by the solute Co atoms in the half-Heusler TiNiSn phase as well as ZrNiSn. The Heusler phase precipitates, including their precursor nano-structure in the half-Heusler matrix and the vacancy site occupation of the half-Heusler phase, are regarded as lattice defects based on the crystallographically and thermodynamically close relationship between half-Heusler and Heusler phases.