2022
DOI: 10.1007/s10853-022-07846-w
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Thermoelectric properties of a vertically aligned carbon nanotube array with embedded bismuth telluride

Abstract: Recently, thermoelectric (TE) devices have attracted much attention because they have no moving parts, simple structures, high reliability, and environmental friendly, when compared to other green energy techniques. In this paper, we report a novel thermoelectric composite constructed one with a self-assembled highly oriented Sb doped Bi2Te3 and one without doping nanoflake layer deposited on regular vertically aligned checkerboard-patterned multi-walled carbon nanotube (MWCNT) arrays (500 nm squares and 1 µm … Show more

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Cited by 2 publications
(1 citation statement)
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“…However, the main drawback to the application of Bi 2 Se 3 and Sb 2 Te 3 ultrathin films in TEGs is their fragility and the necessity to use solid substrates, which have relatively high thermal conductance. Recently, it was demonstrated by different research groups that combining bismuth and antimony chalcogenide nanostructures with carbon nanotubes (CNT) via the direct deposition of inorganic nanostructures on the CNT network via sputtering or PVD methods results in the formation of heterostructures which exhibit Seebeck coefficients comparable with that of bulk inorganic TE materials [12][13][14][15][16] and ZTs reaching 0.89 for some heterostructures, such as, for instance, Bi 2 Te 3 -CNT hybrid nanostructure scaffolds [12]. This high ZT value was attributed to the combination of the high electrical and low thermal conductivity of CNT networks [17] and the good room temperature thermoelectric properties of Bi 2 Se 3 , Bi 2 Te 3, and Sb 2 Te 3 [18,19].…”
Section: Introductionmentioning
confidence: 99%
“…However, the main drawback to the application of Bi 2 Se 3 and Sb 2 Te 3 ultrathin films in TEGs is their fragility and the necessity to use solid substrates, which have relatively high thermal conductance. Recently, it was demonstrated by different research groups that combining bismuth and antimony chalcogenide nanostructures with carbon nanotubes (CNT) via the direct deposition of inorganic nanostructures on the CNT network via sputtering or PVD methods results in the formation of heterostructures which exhibit Seebeck coefficients comparable with that of bulk inorganic TE materials [12][13][14][15][16] and ZTs reaching 0.89 for some heterostructures, such as, for instance, Bi 2 Te 3 -CNT hybrid nanostructure scaffolds [12]. This high ZT value was attributed to the combination of the high electrical and low thermal conductivity of CNT networks [17] and the good room temperature thermoelectric properties of Bi 2 Se 3 , Bi 2 Te 3, and Sb 2 Te 3 [18,19].…”
Section: Introductionmentioning
confidence: 99%