Thermoelectric Properties of Amorphous Ge/Au and Si/Au Thin Films

Miyata, Akiko; Abe, Makoto; Kawahara, Toshio; Morimoto, Jun; Inoue, Narumi

doi:10.1541/ieejfms.124.307

Cited by 9 publications

(15 citation statements)

References 22 publications

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“…A conventional DC method and a conventional DC four-terminal method were employed for the measurements of thermoelectric power and electrical resistivity (parallel to the layers), respectively. [13][14][15][16][17][18][19][20][21][22][23][24] The samples were H-shaped, similarly to those in previous studies. [13][14][15][16][17][18][19][20][21][22][23][24] The thermoelectric power was measured with a temperature difference (ΔT) of at least ΔT > 5 K.…”

Section: Experimental Methodsmentioning

confidence: 67%

“…[13][14][15][16][17][18][19][20][21][22][23][24] The samples were H-shaped, similarly to those in previous studies. [13][14][15][16][17][18][19][20][21][22][23][24] The thermoelectric power was measured with a temperature difference (ΔT) of at least ΔT > 5 K.…”

Section: Experimental Methodsmentioning

confidence: 67%

“…The samples were prepared in an ultrahigh-vacuum evaporation system, as used previously. [13][14][15][16][17][18][19][20][21][22][23][24] The sample preparation system had three evaporation sources, which employed three electron beam guns: Au, Ge, and Si. In this study, two of the three evaporation systems were used.…”

Section: Experimental Methodsmentioning

confidence: 99%

“…[2][3][4][5][6][7][8][9][10][11] A Si-Ge-Au superlattice thin-film has the highest performance among the thermoelectric materials. [12][13][14][15][16][17][18][19][20][21][22][23][24] However, the reproducibility of this material is very low. The authors have made more than 800 samples, but only around 10 samples showed excellent performance (absolute value of thermoelectric power |α| > 10 −3 V•K −1 ).…”

Section: Introductionmentioning

confidence: 99%

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Necessary conditions for superior thermoelectric power of Si/Au artificial superlattice thin-film

Watanabe

Miyazaki

Morimoto

2018

Jpn. J. Appl. Phys.

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The Si-Ge-Au ternary artificial superlattice thin-films showed superior thermoelectric power with low reproducibility. Superior thermoelectric power was only generated, when nanocrystals existed. Therefore, the origin of superior thermoelectric power was considered to be the quantum size effect of nanocrystals. However, even with the presence of nanocrystals, superior thermoelectric power was often not generated. In order to investigate the generation conditions of superior thermoelectric power in more detail, the samples were simplified to Si-Au binary artificial superlattice samples. Furthermore, annealings were carried out under conditions where nanocrystals were likely to be formed. From the results of Raman scattering spectroscopy and X-ray diffraction (XRD) analysis, the diameter of nanocrystals and the spacing between nanocrystals were calculated with an isotropic three-dimensional mosaic model. It was found that superior thermoelectric power was generated only when the diameter of nanocrystals was 11 nm or less and the spacing between nanocrystals was 3 nm or less.

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Section: Experimental Methodsmentioning

confidence: 67%

Section: Experimental Methodsmentioning

confidence: 67%

Section: Experimental Methodsmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

See 2 more Smart Citations

Necessary conditions for superior thermoelectric power of Si/Au artificial superlattice thin-film

Watanabe

Miyazaki

Morimoto

2018

Jpn. J. Appl. Phys.

Self Cite

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“…Taking into account the fact that the proper selection of material composition and doping of basis materials leads to achieving better thermoelectric properties of materials, further research is focused on the influence of dopant materials on properties of germanium thin films. For example, the influence of antimony [27,28], vanadium [29] and gold [30,31] was investigated.…”

Section: Introductionmentioning

confidence: 99%

Thermoelectric Properties of Thin Films of Germanium-Gold Alloy Obtained by Magnetron Sputtering

2019

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In this paper, the electric and thermoelectric properties of thin films of germanium–gold alloy (Ge–Au) are discussed in terms of choosing the optimal deposition process and post-processing conditions to obtain Ge–Au layers with the best thermoelectric parameters. Thin films were fabricated by magnetron sputtering using the Ge–Au alloy target onto glass substrates at two various conditions; during one of the sputtering processes, the external substrate bias voltage (Ub = −150 V) was used. After deposition thin films were annealed in the atmosphere of N2 at various temperatures (473, 523 and 573 K) to investigate the influence of annealing temperature on the electric and thermoelectric properties of films. Afterwards, the thermocouples were created by deposition of the NiCrSi/Ag contact pads onto Ge–Au films. In this work, particular attention has been paid to thermoelectric properties of fabricated thin films—the thermoelectric voltage, Seebeck coefficient, power factor PF and dimensionless figure of merit ZT were determined.

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Seebeck Coefficient of AuxGe1−x Thin Films Close to the Metal-Insulator Transition for Molecular Junctions

et al. 2019

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Thermoelectric Properties of Amorphous Ge/Au and Si/Au Thin Films

Cited by 9 publications

References 22 publications

Necessary conditions for superior thermoelectric power of Si/Au artificial superlattice thin-film

Necessary conditions for superior thermoelectric power of Si/Au artificial superlattice thin-film

Thermoelectric Properties of Thin Films of Germanium-Gold Alloy Obtained by Magnetron Sputtering

Seebeck Coefficient of AuxGe1−x Thin Films Close to the Metal-Insulator Transition for Molecular Junctions

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