Dimensionless figure-of-merit (zT) is the most typical descriptor to evaluate thermoelectric materials, which is defined as zT = S 2 σT/κ, where S, σ, T and κ are the Seebeck coefficient, the electrical conductivity, the absolute temperature, and the thermal conductivity, respectively. [4,5] κ includes the lattice thermal conductivity (κ l ) and the electrical thermal conductivity (κ e ). [6,7] To achieve high energy conversion efficiency, high zT values with high power factor (S 2 σ) and low κ are required. According to extensive investigations, S 2 σ can be increased by quantum confinement, [8,9] modulation doping, [10] band convergence, [5,11] and resonant state engineering. [12,13] Whereas, κ (mainly κ l ) is mainly reduced by introducing a variety of lattice defects as phonon scattering centers such as point defects, [14,15] dislocations, [16,17] stacking faults, [18,19] nano precipitates, [20,21] and hierarchical architecture structures. [22,23] GeTe is a promising mid-temperature material with a phase transition from the rhombohedral phase (R-GeTe) to the cubic phase (C-GeTe) at ≈700 K. However, the intrinsic high carrier concentration (n h for p-type GeTe, ≈10 21 cm −3 due to massive Ge vacancies) limits its S 2 σ and thus zT (≈0.75 at ≈740 K). [24,25] To
According to theMott's relation, the figure-of-merit of a thermoelectric material depends on the charge carrier concentration and carrier mobility. This explains the observation that low thermoelectric properties of GeTe-based materials suffer from the degraded carrier mobility, on account of the fluctuation of electronegativity and ionicity of various elements. Here, highperformance CuBiSe 2 alloyed GeTe with high carrier mobility due to the small electronegativity difference between Cu and Ge atoms and the weak ionicity of CuTe and BiTe bonds, is developed. Density functional theory calculations indicate that CuBiSe 2 alloying increases the formation energy of Ge vacancies and correspondingly reduces the amount of Ge vacancies, leading to an optimized carrier concentration and a high power factor of ≈37.4 µW cm −1 K −2 at 723 K. Moreover, CuBiSe 2 alloying induces dense point defects and triggers ubiquitous lattice distortions, leading to a reduced lattice thermal conductivity of 0.39 W m −1 K −1 at 723 K. These synergistic effects result in an optimization of the carrier mobility, the carrier concentration, and the lattice thermal conductivity, which favors an enhanced peak figure-of-merit of ≈2.2 at 723 K in (GeTe) 0.94 (CuBiSe 2 ) 0.06 . This study provides guidance for the screening of GeTe-based thermoelectric materials with high carrier mobility.