Thermoelectric properties of chemically substituted Heusler-type Ru2-Nb1+Ga and Ru2NbGa1-M (M = In, Ge, and Sn) alloys

Magnetic and transport properties in metallic and disordered Ru2VAl and Ru2VGa

“…It should be noted here that many such efforts have been made to optimize the thermoelectric properties of Fe 2 VAl, resulting in an encouraging increment in the Seebeck coefficient value from ∼35 µV/K to ∼130 µV/K [14,34,35,36,39]. In Ru 2 TaAl and Ru 2 NbGa, by introducing offstoichiometry, substantial increase in ZT could be achieved [26,75]…”

Phonon Scattering Mechanism for Size‐Dependent Thermoelectric Properties of Bi2Te3 Nanoparticles

“…This drastic change in thermal properties opens opportunities for the development of such lattices for thermoelectric applications. Thermoelectric properties of chemically substituted Ru 2 NbGa 1−x M x (M=In, Ge, and Sn) Heusler‐type alloys show that the Seebeck coefficient changes sign on increasing the doping percentage whereas, the thermal conductivity found to be little affected by the chemical substitution [31] . This behavior of Heusler‐type alloys is unlikely than what is observed in nanomaterials.…”

“…Thermoelectric properties of chemically substituted Ru 2 NbGa 1À x M x (M=In, Ge, and Sn) Heusler-type alloys show that the Seebeck coefficient changes sign on increasing the doping percentage whereas, the thermal conductivity found to be little affected by the chemical substitution. [31] This behavior of Heusler-type alloys is unlikely than what is observed in nanomaterials. Mesoporous cobalt titanate exhibits remarkably higher specific capacitance of 608.4 Fg À 1 and a specific power of 4835.7 W kg À 1 than those of Ti, La, Cr, Fe, Ni, and Sr based perovskites.…”

Synthesis and Electronic Characterization of Weyl Semimetal TaSb2Polycrystalline Material

“…Therefore, by adjusting the E F to an appropriate DOS position by carrier doping with elemental substitution, high Seebeck coefficients can be expected for both p ‐ and n ‐ type materials. Heusler‐type Fe 2 VAl [ 13,15–24 ] and Ru 2 VAl [ 25–27 ] compounds have been studied to improve the performance of thermoelectric conversion materials by focusing on their pseudogap‐like electronic structures. In the Heusler‐type Fe 2 VAl compounds, P = 5.4 × 10 −3 W m −1 K −2 for the electron‐doped Fe 2 VAl 1− x Si x compound [ 15 ] which is reported to be larger than the power factor of n‐type Bi 2 Te 3 materials.…”

“…Therefore, by adjusting the E F to an appropriate DOS position by carrier doping with elemental substitution, high Seebeck coefficients can be expected for both p-and n-type materials. Heusler-type Fe 2 VAl [13,[15][16][17][18][19][20][21][22][23][24] and Ru 2 VAl [25][26][27] compounds have been studied to improve the performance of thermoelectric conversion materials by focusing on their pseudogap-like electronic structures. In the Heusler-type Fe 2 VAl compounds,…”