Thermoelectric properties of co-doped (Bi0.98In0.02)2Te2.7Se0.3 /reduced graphene oxide composites prepared by solid-state reaction

Graphene-derived composites: a new Frontier in thermoelectric energy conversion

“…Consequently, Table 2 shows graphene's synthesis method and properties with their derivative and inorganic thermoelectric materials. Hegde et al 162 reported the TE efficiency of pure (Bi 0.98 In 0.02 ) 2 Te 2.7 Se 0.3 with rGO composite in the temperature range of 10-325 K. These compounds follow the rhombohedral structure of the space group R 3 m. The presence of 0.02 wt% rGO in the matrix of (Bi 0.98 In 0.02 ) 2 Te 2.7 Se 0.3 reduced thermal conductivity by 1.6-fold and electrical resistance by 10-fold at 325 K (Bi 0.98 In 0.02 ) 2 Te 2.7 Se 0.3 /rGO because of the interaction between interfacial dispersion and antistite defects. At 325 K, the maximum PF of 7 mW m À1 K À2 and the figure of merit of 0.0026 were obtained with the (Bi 0.98 In 0.02 ) 2 Te 2.7 Se 0.3 containing 0.01 wt % rGO.…”

A liquid metal-based process for tuning the thermoelectric properties of bismuth indium systems

“…The choice of indium in this work is based on (a) its relatively low melting temperature (lower than bismuth) that facilitates a low temperature liquid metal-based process, (b) its similar electronic structure, hence a comparable electron scattering effect with bismuth, as reported by other studies, 37,50,51 and (c) previous predictions that the Bi–In alloy could be an efficient thermoelectric material. 37 In our study, the Bi–In system is synthesized as a metal alloy.…”

“…50 Furthermore, indium can be used as a dopant in a way that it can replace bismuth sites due to the close resemblance in their atomic radii. 51 At the same time, the inclusion of indium promotes lattice stress and structural alterations that augment phonon scattering. 37 In this work, mixes of bismuth and indium are used.…”

Enhancing Thermoelectric and Mechanical Properties of p-Type (Bi, Sb)2Te3 through Rickardite Mineral (Cu2.9Te2) Incorporation

“…Bi 2 Te 3 -based alloys remain the best near-room-temperature thermoelectric materials and are widely used in Peltier coolers and low-grade power generation systems. ,− p -type Bi 0.5 Sb 1.5 Te 3 (BST) showed high and reproducible zT values of around 1.2 at 300 K, − while n -type Bi 2 (Te, Se) 3 show lower zT values that fall below unity at 300 K. − High carrier mobility and band degeneracy along with intrinsically low lattice thermal conductivity of these materials allow for a high thermoelectric efficiency to be reached around room temperature. On the other hand, the low band gap of ∼0.15 eV for Bi 2 Te 3 results in excitations of minority carriers that typically onset at 400 K, causing a dramatic reduction in the zT values at higher temperatures. , …”