2022
DOI: 10.1016/j.ceramint.2021.09.143
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Thermoelectric properties of different polymorphs of gallium phosphide; A first-principles study

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Cited by 20 publications
(6 citation statements)
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“…Over the past few decades, semiconductor materials have attracted substantial attention due to their remarkable physical properties, making them adaptable to many modern technological applications. Of this large family, group III nitrides, particularly AlN, are characterized by a high melting point, high thermal conductivity, good dielectric strength, high degree of hardness, and direct wide band gap. These characteristics make AlN a suitable material for microelectronic substrate applications, short-wavelength light-emitting diodes, laser diodes, and optical detectors, as well as for high-temperature, high-power, and high-frequency devices. Consequently, extensive research has been conducted to characterize, as precisely as possible, the essential optical and electronic properties of AlN, which are of primary importance, as well as its mechanical and structural response. In contrast to the zincblende (ZB), wurtzite (WZ), and rock salt (RS) phases, no comprehensive experimental or theoretical investigation has been conducted on the polytypism of AlN.…”
Section: Introductionmentioning
confidence: 99%
“…Over the past few decades, semiconductor materials have attracted substantial attention due to their remarkable physical properties, making them adaptable to many modern technological applications. Of this large family, group III nitrides, particularly AlN, are characterized by a high melting point, high thermal conductivity, good dielectric strength, high degree of hardness, and direct wide band gap. These characteristics make AlN a suitable material for microelectronic substrate applications, short-wavelength light-emitting diodes, laser diodes, and optical detectors, as well as for high-temperature, high-power, and high-frequency devices. Consequently, extensive research has been conducted to characterize, as precisely as possible, the essential optical and electronic properties of AlN, which are of primary importance, as well as its mechanical and structural response. In contrast to the zincblende (ZB), wurtzite (WZ), and rock salt (RS) phases, no comprehensive experimental or theoretical investigation has been conducted on the polytypism of AlN.…”
Section: Introductionmentioning
confidence: 99%
“…The Cartesian indices of the tensor quantities being α and β. The unit cell's volume, electronic charge, and carriers' Fermi–Dirac distribution function are denoted by normalΩ, e, and f00.25em, respectively 41,42 . The energy projected transport distribution function, abbreviated σαβ()ε is as follows: σαβ()εgoodbreak=e2Ni,kτνα()i,kνβ()i,kδ()εgoodbreak−εi,k, …”
Section: Methods Of Calculationsmentioning
confidence: 99%
“…The unit cell's volume, electronic charge, and carriers' Fermi-Dirac distribution function are denoted by Ω, e, and f 0 , respectively. 41,42 The energy projected transport distribution function, abbreviated σ αβ ε ð Þ is as follows:…”
Section: Methods Of Calculationsmentioning
confidence: 99%
“…The growing need for energy and energy wastage as heat inspired researchers to evaluate novel substances and develop heat energy into electrical energy recycling techniques. 66,67 Nevertheless, the aspirations are restricted by limitations, including cost efficiencies, availability in nature, accessibility, customizable attributes, and, most importantly, high thermal to electrical energy conversion factor. In this study, the BoltzTrap code was used to figure out the thermoelectric properties of the compounds based on their TB-mBJ band structures.…”
Section: Thermoelectric Attributesmentioning
confidence: 99%