Thermoelectric properties of efficient thermoelectric materials on the basis of bismuth and antimony chalcogenides for multisection thermoelements

Shtern, M. Yu.; Рогачев, М. С.; Shtern, Yu. I.; Шерченков, А. А.; Бабич, А. В.; Korchagin, Egor P.; Никулин, Д. С.

doi:10.1016/j.jallcom.2021.160328

Cited by 16 publications

(3 citation statements)

References 81 publications

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“…Van der Waals (VdW) materials based on bismuth and antimony chalcogenides have received great interest thanks to their thermoelectric properties [1][2][3][4][5]. Thermal conductivity of such alloys is reduced due to the effective scattering of phonons, which causes an increase in thermoelectric properties.…”

Section: Introductionmentioning

confidence: 99%

PHASE RELATIONS IN THE Sb2Te2S-Bi2Te2S SYSTEM AND CHARACTERIZATION OF Sb2-xBixTe2S SOLID SOLUTIONS

Aliyev¹,

Orujlu²,

Бабанлы³

et al. 2023

Chemical Problems

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The phase equilibria of the Sb2Te2S-Bi2Te2S system was studied by powder X-ray diffraction (PXRD), differential thermal analysis (DTA), scanning electron microscope (SEM) and energy dispersive Xray (EDX) microanalysis. It was shown that due to incongruent melting of the Sb2Te2S compound the system is non-quasibinary, but it is stable below the solidus and characterized by the formation of a continuous series of solid solutions with a tetradymite-like hexagonal structure. The lattice parameters were determined from powder diffraction patterns. It was established that the crystal lattice parameters of solid solutions vary linearly with composition

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Section: Introductionmentioning

confidence: 99%

PHASE RELATIONS IN THE Sb2Te2S-Bi2Te2S SYSTEM AND CHARACTERIZATION OF Sb2-xBixTe2S SOLID SOLUTIONS

Aliyev¹,

Orujlu²,

Бабанлы³

et al. 2023

Chemical Problems

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“…In the last two decades, the activity of scientific research in the field of thermoelectricity has significantly increased. Effective TE materials were obtained with the ZT parameter equal to 1.2−1.4 [7][8][9][10][11][12]. These TE materials cover almost the entire operating temperature range for thermoelectric devices from 150 to 1300 K. At present, research is being actively carried out in order to obtain nanostructured TE materials.…”

Section: Introductionmentioning

confidence: 99%

“…These TE materials cover almost the entire operating temperature range for thermoelectric devices from 150 to 1300 K. At present, research is being actively carried out in order to obtain nanostructured TE materials. Thus, a decrease in the phonon component of thermal conductivity and, accordingly, an increase in ZT are achieved [6,7,[13][14][15][16].…”

Section: Introductionmentioning

confidence: 99%

Multi-section thermoelements, advantages and problems of their creation

M.Yu.

2022

Semiconductors

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In this work, the ways of increasing the efficiency of thermoelectric generators are considered. These include an increase in the figure of merit of thermoelectric materials, as well as an increase in the temperature difference between hot and cold junctions of thermoelements and, accordingly, the range of their operating temperatures. The expediency of using thermoelements with multi-section legs has been substantiated. For their creation, effective thermoelectric materials with operating temperatures in the range of 300-1200 K have been proposed. A technique for modeling such thermoelements has been developed. Structures and materials of effective contact systems for multi-section thermoelements have been proposed, a technology for their manufacture has been developed. Ways of switching sections in thermoelement legs are considered. The thermal expansion of thermoelectric materials is investigated and a method for damping thermal stresses in the design of a thermoelement is proposed. The problem of thermoelectric material sublimation at high temperatures was solved by using protective coatings. Key words: thermoelectric generators, multi-section thermoelements, thermoelectric materials, thermal and electrophysical properties, contact systems, protecting coatings.

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A comprehensive experimental and DFT analysis on thermoelectric properties of Sb, Te co-doped Bi2Se3 polycrystals

Puthran,

Hegde,

Prabhu

et al. 2024

J Mater Sci

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As tellurides and selenides of Bismuth are extensively used thermoelectric materials in the low-temperature range with refrigeration application, A concerted effort is put forth to boost the ZT by co-doping the pristine Bi2Se3 with antimony (Sb) on cation end and tellurium (Te) on anion side of the compound. The double sintered solid-state reaction method is employed in the preparation of Bi2Se3 and (Bi1−xSbx)2Se2.7Te0.3 polycrystalline pellets, with x = 0.02, 0.04, and 0.06. The sample exhibits a rhombohedral structure with the space group of R $$\overline{3 }$$ 3 ¯ m. FESEM and EDAX analysis are used to confirm surface morphology and elemental composition of the produced samples. The thermoelectric measurements for the pristine and co-doped samples were conducted by the physical property measurement system as well as a considerable increase in the Seebeck coefficient of − 115 µV/K is observed for 0.02 doping of the Sb which is 4.2 times greater than as for pristine (S = − 28 µV/K). Higher concentration doping (x = 0.04, 0.06) has not reflected any Seebeck coefficient advancement. In contrast, the lowest total thermal conductivity at a low-temperature regime (< 50 K) is observed for x = 0.06 doping concentration which at near room temperature increases beyond the pristine thermal conductivity; whereas, x = 0.02, 0.04 doping concentration shows a decrement in total thermal conductivity at low, at room temperature region the values are almost equivalent to that of pristine. The co-doped samples’ electrical resistivity is substantially less than pristine sample. The highest power factor of 3 × 10–4 µW/mK2 is obtained for the x = 0.02 sample. The highest ZT value for the x = 0.02 sample is almost 28 times more than a pristine sample. We conducted a study where we combined experimental and DFT methods to investigate thermoelectric properties incorporated into pristine and doped with antimony and tellurium on Bi2Se3. We have employed this combination to investigate the partial density of states, Seebeck coefficient, power factor using the Boltzmann transport equation. Theoretical thermoelectric data were derived and compared to experimental observations. Hence, using combined experimental and theoretical investigations helps to predict with higher accuracy of thermoelectric properties of semiconducting materials.

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Thermoelectric properties of efficient thermoelectric materials on the basis of bismuth and antimony chalcogenides for multisection thermoelements

Cited by 16 publications

References 81 publications

PHASE RELATIONS IN THE Sb2Te2S-Bi2Te2S SYSTEM AND CHARACTERIZATION OF Sb2-xBixTe2S SOLID SOLUTIONS

PHASE RELATIONS IN THE Sb2Te2S-Bi2Te2S SYSTEM AND CHARACTERIZATION OF Sb2-xBixTe2S SOLID SOLUTIONS

Multi-section thermoelements, advantages and problems of their creation

A comprehensive experimental and DFT analysis on thermoelectric properties of Sb, Te co-doped Bi2Se3 polycrystals

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