1999
DOI: 10.2978/jsas.11.3_188
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Thermoelectric properties of Fe doped SiC ceramics.

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Cited by 7 publications
(3 citation statements)
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“…I N ADDITION to interest in its properties for structural applications, silicon carbide has more recently been the focus of many investigations for its electronic properties. [1][2][3][4][5] As a wide-gap semiconductor, it has received considerable attention as a material for high-power device applications, including radar and microwave applications under extreme conditions. It has a high critical field strength, good carrier mobility, and excellent thermal conductivity.…”
Section: Introductionmentioning
confidence: 99%
“…I N ADDITION to interest in its properties for structural applications, silicon carbide has more recently been the focus of many investigations for its electronic properties. [1][2][3][4][5] As a wide-gap semiconductor, it has received considerable attention as a material for high-power device applications, including radar and microwave applications under extreme conditions. It has a high critical field strength, good carrier mobility, and excellent thermal conductivity.…”
Section: Introductionmentioning
confidence: 99%
“…The thermal conductivity monotonically increased from 117 Wm −1 K −1 in A0 to 154 Wm −1 K −1 in A100 sample due to (1) an increased 6H-SiC content, which has a higher intrinsic thermal conductivity compared with that of 4H-SiC, 23 (2) the lower soluble impurity content of the α-SiC starting powders (Table 1), and (3) an increased relative density with increasing initial α-phase content (Table 2). 23 Soluble impurities, such as Fe and V, 40,41 act as phonon scattering sites in the SiC lattice and deteriorate the thermal conductivity. The reported thermal conductivities of solid-state sintered SiC ceramics varies from 107 to 192 Wm −1 K −1 depending on the composition and processing conditions (Table 3).…”
Section: Electrical and Thermal Propertiesmentioning
confidence: 99%
“…The thermal conductivity monotonically increased from 117.1 Wm − 1 K − 1 in A0 to 154.2 Wm − 1 K − 1 in A100 due to (1) an increased 6H-SiC content, which has a higher intrinsic thermal conductivity compared to that of 4H-SiC [38] and (2) the low soluble impurity content of the α-SiC starting powders (refer to Table1). Soluble impurities, such as Fe and V[55, 56], act as phonon scattering sites in the SiC lattice and deteriorate the thermal conductivity. As shown in Table…”
mentioning
confidence: 99%