2007 26th International Conference on Thermoelectrics 2007
DOI: 10.1109/ict.2007.4569474
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Thermoelectric properties of Hf<inf>1&#x2212;x</inf>Zr<inf>x</inf>Te<inf>5</inf> polycrystals with high density

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“…Specifically, as the temperature increases from low temperature to room temperature, the induced lattice expansion and the increase in interlayer distance lead to topological phase transitions from the STI to the DSM and then to the WTI, as schematically illustrated in Figure a. This discovery unified the differences in the electronic band structure of ZrTe 5 that were reported by various groups, and well explained the temperature-dependent and magnetic field-dominated transport characteristics of doped samples. , Moreover, Zhang et al also found by ARPES that ZrTe 5 features a temperature-induced Lifshitz electronic transition, in which the Fermi level ( E F ) will move toward the valence band as temperature increases, as illustrated in Figure a.…”
Section: Introductionsupporting
confidence: 59%
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“…Specifically, as the temperature increases from low temperature to room temperature, the induced lattice expansion and the increase in interlayer distance lead to topological phase transitions from the STI to the DSM and then to the WTI, as schematically illustrated in Figure a. This discovery unified the differences in the electronic band structure of ZrTe 5 that were reported by various groups, and well explained the temperature-dependent and magnetic field-dominated transport characteristics of doped samples. , Moreover, Zhang et al also found by ARPES that ZrTe 5 features a temperature-induced Lifshitz electronic transition, in which the Fermi level ( E F ) will move toward the valence band as temperature increases, as illustrated in Figure a.…”
Section: Introductionsupporting
confidence: 59%
“…The energy conversion efficiency of TE materials is determined by the TE dimensionless figure of merit ZT , ZT = S 2 T /ρ­(κ e + κ L ), where S is the Seebeck coefficient, ρ is the electrical resistivity, T is the absolute temperature, κ e is the electronic thermal conductivity, and κ L is the lattice thermal conductivity of the materials. The high conversion efficiency requires a high power factor (PF = S 2 /ρ) and low thermal conductivity in TE materials. The thermal conductivity of ZrTe 5 is very low, for example, the κ L of its single crystal along the b axis is as low as 0.35 W m –1 K –1 , which makes this material a potential candidate with significant TE performances. The reasons for its low κ L include its heavy element content, complex crystal structure, van der Waals (vdW) layered structure, and weak chemical bonds …”
Section: Introductionmentioning
confidence: 99%
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