Thermoelectric properties of nano-grained CoSb/sub 3/ skutterudites doped with Ni and Te

In-filled and Te-doped CoSb 3 skutterudites were prepared by encapsulated induction melting, and their thermoelectric properties were investigated from 300K to 700K. Single δphase was successfully obtained by the subsequent heat treatment at 823K for 5 days. In-filled and Te-doped In z Co 4 Sb 12-y Te y showed the n-type conduction at all temperatures examined, indicating that Te atoms successfully acted as electron donors by substituting Sb atoms. Electrical resistivity was reduced by In filling and Te doping, and the Te doping effect on the resistivity decrease was predominant. Thermal conductivity was considerably reduced by In filling as well as Te doping due to the increase in phonon scattering, which shows that the lattice thermal conductivity is much larger than the electronic thermal conductivity in the In z Co 4 Sb 12-y Te y systems.

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Fabrication of Thermoelectric Module by A New Manufacturing Process and Its Performance

Ikuta¹,

Itoh²

2009

J. Jpn. Soc. Powder Powder Metallurgy

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Thermoelectric properties of nano-grained CoSb/sub 3/ skutterudites doped with Ni and Te

Cited by 5 publications

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Thermoelectric Properties of SnzCo4Sb12-yTey Skutterudites

Thermoelectric Properties of SnzCo4Sb12-yTey Skutterudites

Thermoelectric properties of In<inf>z</inf>Co<inf>4</inf>Sb<inf>12-y</inf>Te<inf>y</inf> skutterudites

Fabrication of Thermoelectric Module by A New Manufacturing Process and Its Performance

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