Thermoelectric properties of Zn-doped In0.95Ga0.05Sb crystals grown by directional solidification

Velu, Nirmal Kumar; Hayakawa, Y.; Udono, Haruhiko; Inatomi, Yuko

doi:10.1007/s10853-023-08546-9

Cited by 2 publications

(1 citation statement)

References 55 publications

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“…And the band gap can be increased from 0.18 eV (InSb) to 0.725 eV (GaSb) [4,5], and the cutoff wavelength can be adjusted from 1.7 μm (GaSb) to 7.3 μm (InSb) [6]. Therefore, GaInSb crystals can be more widely used in epitaxial substrate materials [7], quantum well lasers [8], high electron mobility transistors [9], thermoelectric materials [10,11], as well as infrared (IR) and near-infrared (NIR) devices [12][13][14][15] and other fields.…”

Section: Introductionmentioning

confidence: 99%

Improving the quality and properties of GaInSb crystal with Al doping

Wang,

Liu,

Liu

et al. 2024

Phys. Scr.

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GaInSb crystal is a promising substrate material that can be used to prepare various high-performance devices. Ga0.86In0.14Sb and Al-doped Ga0.86In0.14Sb (Ga0.86In0.14Sb:Al) crystals were grown with the vertical Bridgman method (VB). The doping concentration of aluminum (Al) is 0.005 - 0.015 molar ratio. The effect of Al doping on the structure and properties of Ga0.86In0.14Sb crystal was studied. The results indicated that Al doping significantly reduced the segregation of indium (In) component in the crystal, with the radial segregation reaching a minimum of 0.051 mol%/mm and the axial segregation reaching a minimum of 0.067 mol%/mm. The doping of Al also improved the crystal quality (lattice structure integrity) of Ga0.86In0.14Sb. The passivation and compensation of Al on the intrinsic defects of Ga0.86In0.14 Sb crystal significantly inhibited the generation of dislocation, of which density decreased to 2.461 × 103 cm-2. The doping of Al as the equivalent electron element of gallium (Ga) and In not only made the carrier concentration increase to 1.848 × 1018 cm-3 but also made the carrier mobility increase to 1.982 × 103 cm2/(V·s), resulting in the resistivity decreasing to 1.261 × 10−3 Ω·cm.

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Section: Introductionmentioning

confidence: 99%

Improving the quality and properties of GaInSb crystal with Al doping

Wang,

Liu,

Liu

et al. 2024

Phys. Scr.

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Record High Thermoelectric Figure of Merit of a III-V Semiconductor InGaSb by Defects Engineering via the Addition of Excess Constituent Elements

Velu,

Hayakawa,

Udono

et al. 2024

ACS Appl. Mater. Interfaces

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Materials with enhanced electron and reduced phonon transport properties are preferred for thermoelectric applications. The defect engineering process can optimize the interrelated electron and phonon transport properties to enhance thermoelectric performance. As the influence of various crystalline defects on the functional properties of materials is diverse, it is crucial to scale, optimize, and understand them experimentally. With this perspective, crystalline defects in InGaSb ternary alloys were engineered and their influence on the thermoelectric properties was studied experimentally. Crystalline defects such as point defects, dislocations, and compositional segregations were induced in In 0.95 Ga 0.05 Sb crystals by the addition of excess constituent elements, In, Ga, or Sb. The addition of excess Ga increased point defects, whereas excess Sb reduced dislocation densities. The thermoelectric figure of merit value (ZT) of In 0.95 Ga 0.05 Sb+Ga 0.02 was recorded to be 0.87 at 573 K, which is the highest among other reported values of III-V semiconductors. The collective interactions of compositional segregations, point defects, and dislocations with electrons and phonons enhanced the ZT in this study.

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Thermoelectric properties of Zn-doped In0.95Ga0.05Sb crystals grown by directional solidification

Cited by 2 publications

References 55 publications

Improving the quality and properties of GaInSb crystal with Al doping

Improving the quality and properties of GaInSb crystal with Al doping

Record High Thermoelectric Figure of Merit of a III-V Semiconductor InGaSb by Defects Engineering via the Addition of Excess Constituent Elements

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