Thermoelectric Properties of ZnO Ceramics Co-Doped with Al and Transition Metals

Yamaguchi, Hiroyuki; Chonan, Yasunori; Oda, Manabu; Komiyama, Tomoyoshi; Aoyama, Takashi; Sugiyama, Shigeaki

doi:10.1007/s11664-011-1529-9

Cited by 53 publications

(34 citation statements)

References 8 publications

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“…The results of that investigation got the ZT value around 0.65 at 1000°C [5]. During the last decades, several studies of the thermoelectric properties of ZnO doped with either elements such as Al, Ni, Sm, Ce, Dy, Ga and Sb have been reported [1,2,19,20]. Figure 2 shows the number of articles already published between 2009 and 2017.…”

Section: Introductionmentioning

confidence: 94%

“…Among the thermoelectric materials, zinc oxide displays a good seebeck coefficient value, a high thermal stable temperature ranges and low environmental impact [22,23]. The different investigations on ZnO materials present that their thermoelectric properties can be improved by substitution with different element such as Aluminum [1][2][3][4][24][25][26][27][28], Cerium and Dysprosium [29], Gallium [6,[30][31][32], Indium [33], praseodymium [34], Antimony [20] and Nickel [7,19]. Therefore, ZnO as thermoelectric materials is slowly developing, but surely gaining attention as one of the candidates for thermoelectric applications.…”

Section: Thermoelectric Properties Related With Zno Dopant Based Matementioning

confidence: 99%

“…Thermoelectric materials have the ability to directly convert the heat into electricity for power generation applications [8]. The conversion efficiency of these thermoelectric materials was usually determined by the dimensionless figure of merit, ZT = σS 2 T/K, where σ, S, T, and K are the electrical conductivity; Seebeck coefficient, absolute temperature; and total thermal conductivity respectively. The term of S 2 σ is known as power factor [9][10][11].…”

Section: Introductionmentioning

confidence: 99%

See 2 more Smart Citations

A review of thermoelectric ZnO nanostructured ceramics for energy recovery

Mohammed¹,

Sudin²,

Noor³

et al. 2018

IJET

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The thermoelectric devices have the ability to convert heat energy into electrical energy without required moving components, having good reliability however their performance depends on material selections. The advances in the development of thermoelectric materials have highlighted to increase the technology's energy efficiency and waste heat recovery potential at elevated temperatures. The fabrication of these thermoelectric materials depends on the type of these materials and the properties using to evaluate these kind of materials such as thermopower (Seebeck effect), electrical and thermal conductivities. Ceramic thermoelectric materials have attracted increased attention as an alternative approach to traditional thermoelectric materials. From these important thermoelectric ceramic materials that can be a candidate for n-type is ZnO doping, which have excellent thermal and chemical stability, as they are promising for high temperature power generator. This review is an effort to study the thermoelectric properties and elements doping related with zinc oxide nanoceramic materials. Effective ZnO dopants and doping strategies to achieve high electrical and thermal conductivities and high carrier concentration are highlighted in this review to enable the advanced zinc oxide applications in thermoelectric power generation.

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Section: Introductionmentioning

confidence: 94%

Section: Thermoelectric Properties Related With Zno Dopant Based Matementioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

See 1 more Smart Citation

A review of thermoelectric ZnO nanostructured ceramics for energy recovery

Mohammed¹,

Sudin²,

Noor³

et al. 2018

IJET

View full text Add to dashboard Cite

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“…The optimal annealing temperature of AZO is between 400 and 500 °C 7, 8 and it is strictly limited to optical applications, such as LCDs, plasma display panels (PDP), and solar cell applications 9. Many researches have reported the effect of other different dopings, other than the Al‐doping, in the AZnO thin films, such as, Y, B, V, Ni, Ru, Cr, V, Ga, and Mn 10–21. However, the optimum annealing temperatures for the above doped AZO thin films are still considerably high 11, 15, 16.…”

Section: Introductionmentioning

confidence: 99%

Optical and electrical characterization of transparent conductive Gd‐doped AZO thin films

Liu

Lin

et al. 2013

Physica Status Solidi (a)

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The Gd-doped Al-doped Zn oxide (AZO) thin films are prepared and characterized in this study. The findings show that when the Gd doping concentration exceeded a threshold of approximately 3-5 wt%, the resistivity of the Gd:AZO thin film was reduced to a point that was lower than the resistivity of the pure AZO thin film. The reduction in resistivity was caused by the increase of the carrier concentration. This study proposes that the increase in carrier concentration was caused by the additional Gd 3þ -Zn 2þ substitution reaction. After performing 10 wt% Gd doping, the transmittance of the Gd:AZO thin film in the near UV region was increased. Following an annealing process at 200 8C, the transmittance of the annealed 100-nm Gd:AZO (10 wt%) thin films was over 80% at the 375 nm wavelength, which was approximately 40% higher than that of the annealed pure AZO thin film. The 600-nm Gd:AZO (10 wt%) annealed at 200 8C is found to have the best figure of merit value (0.24 ohm À1 ) at 375 nm (near UV regime) among all studied Gd:AZO (10 wt%) thin films in this study.

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“…A second approach is to reduce the ionicity of the metal-oxygen bonds in order to increase the carrier mobility, an example being ZnO-based thermoelectrics. Currently, the most widely studied n-type material is Al-doped ZnO (AZO), which has obtained a ZT value of 0.1 at 1200°C [8]. More recently, by means of co-doping with additional low level impurities (Ga or In), an enhancement of ZT was found.…”

Section: Introductionmentioning

confidence: 99%