Thermoelectric properties of β-Zn/sub 4/Sb/sub 3/ doped with Sn

Koyanagi, T.; Hino, K.; Nagamoto, Y.; Yoshitake, Hideya; Kishimoto, Kenji

doi:10.1109/ict.1997.667186

Cited by 15 publications

(8 citation statements)

References 5 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…Doping is a possible approach for optimizing the thermoelectric properties by reducing its thermal conductivity and adjusting its carrier concentration. However, it was found that doping in β-Zn 4 Sb 3 is very difficult to realize [10,11]. Nakamoto et al [12] investigated thermoelectric properties of Cd doped compounds (Zn 1−x Cd x ) 4 Sb 3 and found that its power factor at 300 K takes a maximum at a Cd content of 0.2.…”

Section: Introductionmentioning

confidence: 99%

The effect of In doping on thermoelectric properties and phase transition of Zn₄Sb₃at low temperatures

Liu¹,

Qin²,

Li³

2007

J. Phys. D: Appl. Phys.

View full text Add to dashboard Cite

β-Zn4Sb3 is a promising thermoelectric material for energy conversion applications due to its exceptional low thermal conductivity. In this report, the effect of In substitution on thermoelectric properties and β to α/α′ phase transition of indium doped compounds (Zn1−xInx)4Sb3 (x = 0–0.02) were investigated at temperatures from 5 to 310 K. The results indicated that low-temperature (T < 300 K) thermal conductivity λ of the doped β-(Zn1−x Inx)4Sb3 (x ≠ 0) reduced remarkably as compared with that of Zn4Sb3 presumably due to enhanced impurity (dopant) scattering of phonons. Direct current electrical resistivity ρ and thermopower S were found to decrease and then increase moderately with the increase in the In content, which could be ascribed to the introduction of donors due to substitution of In3+ for Zn2+, leading to increased electron contribution. Moreover, it was found that the β to α/α′ phase transition of Zn4Sb3 was completely prohibited by In doping, implying that In was substituted predominantly for interstitial Zn and hindered their ordering. In addition, the thermoelectric figure of merit (=S2T/ρλ, where T is temperature) of the doped compound β-(Zn1−xInx)4Sb3 (x ≠ 0) was smaller than that of Zn4Sb3 at the low temperatures because of substantial decrease in their thermopower, suggesting that In substitution for Zn in Zn4Sb3 is not beneficial for raising its low-temperature thermoelectric properties.

show abstract

Section: Introductionmentioning

confidence: 99%

The effect of In doping on thermoelectric properties and phase transition of Zn₄Sb₃at low temperatures

Liu¹,

Qin²,

Li³

2007

J. Phys. D: Appl. Phys.

View full text Add to dashboard Cite

show abstract

“…In recent years, enhanced power factors through doping optimization are achieved in -Zn 4 Sb 3 . Conventional doping such as the substitutions of Pb [33,34], Bi [35], Nb [36], Mg [37], Cu [38], Cd [39,40], Sn [33,41], In [33,34,42,43], Al [42,44], Ga [42,44], Ag [38,45], Hg [46], Fe [47], Te [48], Journal of Nanomaterials 3 and Se [49] for -Zn 4 Sb 3 have been investigated. As listed in Table 1, the composition, Seebeck coefficient , total thermal conductivity , and maximum reported in some typical literatures are given.…”

Section: Structure Of -Zn 4 Sb 3 and Traditional Doping Strategy To Enhance Zt For -Zn 4 Sbmentioning

confidence: 99%

Recent Developments in β‐Zn₄Sb₃ Based Thermoelectric Compounds

Zou

Xie

Feng

et al. 2015

Journal of Nanomaterials

View full text Add to dashboard Cite

Thermoelectricity has been recognized as an environmentally friendly energy conversion technology due to its ability to directly achieve conversion between heat and electricity for a long time.β-Zn4Sb3has attracted considerable interest as promising thermoelectric material in the moderate temperature range (500 K–900 K), which is the temperature range of most industrial waste heat sources. In this paper, first we present the structure ofβ-Zn4Sb3and the traditional doping strategy used to enhance its performance. Next, we review the details of some new methods utilized for improving the thermoelectric properties ofβ-Zn4Sb3and its thermal stability as well as reliability. Finally, the review finishes with highlighting some promising strategies for future research directions in the material.

show abstract

“…[11,12] In the past years, elements in the vicinity of Zn and Sb such as In, Pb, Sn, Cd, Bi, Mg, etc. were generally selected to dope the β -Zn 4 Sb 3 , [13][14][15][16][17][18][19][20] but Ge-substitution in β -Zn 4 Sb 3 has been rarely reported so far. Wang et al recently demonstrated the realization of a high thermoelectric figure of merit in Ge-substituted β -Zn 4 Sb 3 , the experimental results and theoretical calculations revealed that Ge substitution had a marked improvement on the Seebeck coefficient and the power factor.…”

Section: Introductionmentioning

confidence: 99%

Thermal stability and electrical transport properties of Ge/Sn-codoped single crystalline β -Zn ₄ Sb ₃ prepared by the Sn-flux method

Liu¹,

Li²,

Shen³

et al. 2017

Chinese Phys. B

View full text Add to dashboard Cite

This study prepares a group of single crystalline β -Zn 4 Sb 3 with Ge and Sn codoped by the Sn-flux method according to the nominal stoichiometric ratios of Zn 4.4 Sb 3 Ge x Sn 3 (x = 0-0.15). The prepared samples possess a metallic luster surface with perfect appearance and large crystal sizes. The microscopic cracks or defects are invisible in the samples from the back-scattered electron image. Except for the heavily Ge-doped sample of x = 0.15, all the samples are single phase with space group R 3c. The thermal analysis results show that the samples doped with Ge exhibit an excellent thermal stability. Compared with the polycrystalline Ge-substituted β -Zn 4 Sb 3 , the present single crystals have higher carrier mobility, and hence the electrical conductivity is improved, which reaches 7.48×10 4 S•m −1 at room temperature for the x = 0.1 sample. The change of Ge and Sn contents does not improve the Seebeck coefficient significantly. Benefiting from the increased electrical conductivity, the sample with x = 0.075 gets the highest power factor of 1.45×10 −3 W•m −1 •K −2 at 543 K.

show abstract

Thermoelectric properties of β-Zn/sub 4/Sb/sub 3/ doped with Sn

Cited by 15 publications

References 5 publications

The effect of In doping on thermoelectric properties and phase transition of Zn₄Sb₃at low temperatures

The effect of In doping on thermoelectric properties and phase transition of Zn₄Sb₃at low temperatures

Recent Developments in β‐Zn₄Sb₃ Based Thermoelectric Compounds

Thermal stability and electrical transport properties of Ge/Sn-codoped single crystalline β -Zn ₄ Sb ₃ prepared by the Sn-flux method

Contact Info

Product

Resources

About

Thermoelectric properties of β-Zn/sub 4/Sb/sub 3/ doped with Sn

Cited by 15 publications

References 5 publications

The effect of In doping on thermoelectric properties and phase transition of Zn4Sb3at low temperatures

The effect of In doping on thermoelectric properties and phase transition of Zn4Sb3at low temperatures

Recent Developments in β‐Zn4Sb3 Based Thermoelectric Compounds

Thermal stability and electrical transport properties of Ge/Sn-codoped single crystalline β -Zn 4 Sb 3 prepared by the Sn-flux method

Contact Info

Product

Resources

About

The effect of In doping on thermoelectric properties and phase transition of Zn₄Sb₃at low temperatures

The effect of In doping on thermoelectric properties and phase transition of Zn₄Sb₃at low temperatures

Recent Developments in β‐Zn₄Sb₃ Based Thermoelectric Compounds

Thermal stability and electrical transport properties of Ge/Sn-codoped single crystalline β -Zn ₄ Sb ₃ prepared by the Sn-flux method