As a typical multi-layered compound thermoelectric material, BiSbSe1.50Te1.50, can be utilized to fabricate p-n junctions with the same chemical composition. It has great potential in the development and design of high-performance TE devices due to its ability to avoid lattice mismatch incompatibility and harmful band misalignment. However, the TE performance of n-type BiSbSe1.50Te1.50 is limited due to the poor electrical transport properties, which hinders its further application in TE devices. Therefore, it is of great significance to improve the thermoelectric (TE) performance by enhancing the electrical transport properties while maintaining low thermal conductivity. In this work, a series of n-type BiSbSe1.50Te1.50 hot deformation samples were prepared by solid-state reaction combined with hot pressed (HP) sintering. It is found that the preferred orientation and nanoscale lamellar structures with large surface areas form in hot-deformed samples. The donor-like effect elevates the carrier concentration, while these lamellar structures facilitate higher carrier mobility by providing expressways for carriers, giving rise to the enhanced electrical conductivity. Additionally, various and abundant multiscale defects are introduced into samples, evoking strong phonon scattering with different frequency and thus lowering the thermal