Thermoelectric transport properties and crystal growth of BiSbTe3 bulk materials produced by a unique high-pressure synthesis

Guo, Xin; Jia, Xiaopeng; Jie, K.; Sun, Hairui; Zhang, Yuewen; Sun, Bing; Ma, Hongan

doi:10.1039/c3ce40780b

Cited by 35 publications

(13 citation statements)

References 30 publications

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“…The (00l) peaks due to the effect of synthesis pressure are increased strongly and preferentially, which is consistent with our previous work. 17,19 In addition, the peaks of In 2 Te 3 compounds may be identified in Fig.1 due to the In doping, which means that the In atoms have entered into the matrix and substituted for local lattice sites of Bi atoms in crystals.…”

Section: Characterizationmentioning

confidence: 99%

Effect of doping indium into a Bi₂Te₃ matrix on the microstructure and thermoelectric transport properties

Guo

Qin

et al. 2016

RSC Adv.

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Indium (In) as an unconventional doping element for Bi2Te3 is applied in this work to investigate the effect of In doping on the microstructure and thermoelectric transport properties of Bi2Te3-based alloys prepared via a unique high-pressure method (high pressure and high temperature, HPHT). The synthesis time of sample is sharply shortened comparing with conventional preparation methods. Doped In into Bi2Te3 martix can induce the multiple textures and microstructures, effectively scattering different frequency phonons. In the meantime, the electrical transport properties are also significantly modulated because of In atoms as electron donors. As a result, the lattice thermal conductivity and electrical resistivity are dramatically reduced, especially a decrease of 64-54% in 305-585K for lattice thermal conductivity of the samples with In content from 1 to 2 at.%. An acceptable ZT value of 0.65 at 385K is achieved from as-prepared Bi1.9In0.1Te3 bulk materials for In as a dopant in Bi2Te3 matrix.

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Section: Characterizationmentioning

confidence: 99%

Effect of doping indium into a Bi₂Te₃ matrix on the microstructure and thermoelectric transport properties

Guo

Qin

et al. 2016

RSC Adv.

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“…Thermoelectric materials are used for the direct conversion of thermal to electrical energy . Various semiconducting chalcogenides have been studied extensively for thermoelectric application . The performance of thermoelectric materials is determined by measuring the dimensionless figure of merit (ZT).…”

Section: Introductionmentioning

confidence: 99%

“…[2] Va rious semiconducting chalcogenides have been studied extensively for thermoelectric application. [3][4][5][6][7] The performance of thermoelectric materials is determined by measuring the dimensionless figure of merit (ZT). An ideal thermoelectric material should have ah igh electrical conductivity,h igh Seebeckc oefficient and low thermal conductivity.…”

Section: Introductionmentioning

confidence: 99%

“…[33][34][35][36] To the best of our knowledge, there has been no report of In III -doped Cu 3 SbSe 4 thin films prepared by the microwave-assisted technique to date.A ll these characteristics of nanocrystalline thin films have been studied to investigate the suitability of the material for thermoelectric applications. (5)]. D uring the deposition process,t he reaction bath remains colourless for first 10 min, which was the inductionp eriod for the formationo ft he nucleationc entres.U nder microwavei rradiation, if the ionic product exceedst he solubilityp roduct, the nucleation process starts on the substrate surface,w hich leads to turbidity in the reaction mixture.T he deposition of thin films takes place by ion-by-ion condensation followed by Ostwald ripening on the substrate surface.T he nucleation centres form am onolayer on the surface that acts as ac atalyst for the depositiono ff ilms.U nder microwavei rradiation, the remaining metal complexes dissociatet of orm ions in the reaction bath,w hich leads to the growth of the monolayer.…”

Section: Introductionmentioning

confidence: 99%

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Thermoelectric Properties of Indium(III)‐Doped Copper Antimony Selenide Thin Films Deposited Using a Microwave‐Assisted Technique

et al. 2016

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The improvement of the thermoelectric performance of semiconducting chalcogenides is an important task. The principal challenge in this field is to tailor the thermoelectric properties, such as electrical conductivity, Seebeck coefficient, and thermal conductivity, to improve the figure of merit (ZT). Herein, we present an improvement in the thermoelectric properties of InIII‐doped p‐type Cu3SbSe4 thin films deposited by using a microwave‐assisted technique. The deposited thin films were characterized for their optical, structural, morphological, compositional, and electrical transport properties to show the applicability of the materials in thermoelectric energy conversion. The improvement in ZT is achieved with InIII doping because of the enhancement in the charge carrier density of Cu3SbSe4 thin films. A maximum ZT of 0.183 was achieved for Cu3(Sb0.94In0.06)Se4 at 300 K. Our results show that this deposition strategy and doping process can provide an effective solution to fabricate Cu3SbSe4‐based materials for thermoelectric applications.

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“…For example, it is known that SnSe benefits greatly from synthesis at 100 MPa (enhanced

σ

and reduced

κ

) . Similarly, due to modifications of the texture and preferred orientation, which enhance

σ

, the highest ZT values of BiSbTe 3 and Bi 2 Te 3 are achieved by synthesis at 2 and 2.5 GPa, respectively. Table lists materials prepared by high‐pressure synthesis together with the highest reported ZT value (

Z T_{max}

) and the temperature at that this value was measured (

T_{max}

).…”

Section: Introductionmentioning

confidence: 99%

Thermoelectric Materials Under Pressure

Alsaleh

Shoko

Arsalan

et al. 2018

Physica Rapid Research Ltrs

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Recent advances in high-pressure technology provide access both to novel materials and to exotic properties of known materials, thus opening exciting opportunities for fundamental as well as applied research. This review summarizes for various classes of materials the existing knowledge on the thermoelectric behavior under hydrostatic pressure to identify promising directions for future developments.

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Thermoelectric transport properties and crystal growth of BiSbTe3 bulk materials produced by a unique high-pressure synthesis

Cited by 35 publications

References 30 publications

Effect of doping indium into a Bi₂Te₃ matrix on the microstructure and thermoelectric transport properties

Effect of doping indium into a Bi₂Te₃ matrix on the microstructure and thermoelectric transport properties

Thermoelectric Properties of Indium(III)‐Doped Copper Antimony Selenide Thin Films Deposited Using a Microwave‐Assisted Technique

Thermoelectric Materials Under Pressure

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Thermoelectric transport properties and crystal growth of BiSbTe3 bulk materials produced by a unique high-pressure synthesis

Cited by 35 publications

References 30 publications

Effect of doping indium into a Bi2Te3 matrix on the microstructure and thermoelectric transport properties

Effect of doping indium into a Bi2Te3 matrix on the microstructure and thermoelectric transport properties

Thermoelectric Properties of Indium(III)‐Doped Copper Antimony Selenide Thin Films Deposited Using a Microwave‐Assisted Technique

Thermoelectric Materials Under Pressure

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Effect of doping indium into a Bi₂Te₃ matrix on the microstructure and thermoelectric transport properties

Effect of doping indium into a Bi₂Te₃ matrix on the microstructure and thermoelectric transport properties