an on-off ratio of about 10 8 , [5] electron mobilities between 30 cm −2 V −1 s −1 and 200 cm −2 V −1 s −1 , [6] and a layered nature that allows new functionality by merging atomically thin parts of distinct materials. In addition, Van der Waals heterojunctions made of TMD are the subject of intense research [7][8][9][10][11] as an attractive way to tune the electronic performance of devices. From this, exceptional properties can be found, including carrier tunneling, [12] metallic states in Moiré patterns, [13,14] and Van der Waals-Janus type heterojunctions. [15] In this regard, Roy et al. experimentally achieved Van der Waals heterojunctions between MoS 2 /WSe 2 by mechanical exfoliation of the layers. [16] They created a dualgate device architecture that works based on the quantum tunneling of carriers, similar to other reported Van der Waals heterojunctions like MoS 2 / WS 2 , [17] PbI 2 /MoS 2 , [18] and hexagonal boron nitride (h-BN)/ MoS 2 . [19] Ji et al. studied a multilayer MoS 2 /MoSe 2 heterostructure whereby Density Functional Theory (DFT) under different conditions of lattice constraint. [20] The results predicted an enhancement in electron mobility about 1.5 times higher than in pure MoS 2 due to band structure change after heterojunction formation. In the former research, authors also consideredThe electronic structure and thermoelectric properties of MoX 2 (X = S, Se) Van der Waals heterojunctions are reported, with the intention of motivating the design of electronic devices using such materials. Calculations indicate the proposed heterojunctions are thermodynamically stable and present a band gap reduction from 1.8 eV to 0.8 eV. The latter effect is highly related to interactions between metallic d-character orbitals and chalcogen p-character orbitals. The theoretical approach allows to predict a transition from semiconducting to semi-metallic behavior. The band alignment indicates a type-I hetero junction and band offsets of 0.2 eV. Transport properties show clear n-type nature and a high Seebeck coefficient at 300 K, along with conductivity values (σ/τ) in the order of 10 20 . Lastly, using the Landauer approach and ballistic transport, the proposed heterojunctions can be modeled as a channel material for a typical one-gate transistor configuration predicting subthreshold values of ≈60 mV dec −1 and field-effect mobilities of ≈160 cm −2 V −1 s −1 .