Thermoelectrical characteristics of granular semiconductors with resonance-tunnelling charge carriers for conversion of the solar radiation heat component

Abdurakhmanov, B. M.; Adilov, M. M.; Ashurov, M. Kh.; Ashurov, Kh. B.; Кучканов, Ш.К.; Maksimov, S. E.; Оксенгендлер, Б. Л.

doi:10.3103/s0003701x15040039

Cited by 6 publications

(3 citation statements)

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“…Granular Mg 3 Sb 2 particles obtained by synthesis of Mg and Sb elements were selected for conducting research. The novelty of the research is that, for the rst time, the formation of a heterogeneous environment in granulated Mg 3 Sb 2 particles and the processes of charge transfer in them were carried out during the temperature change at T = 300-700 K based on the method of Egor and Disselkhorsta [9][10][11][12]. Figure 1 illustrates the research method and a simpli ed scheme of the sample.…”

Section: Materials and Research Methodsmentioning

confidence: 99%

“…It should be noted that in recent years, much attention has been paid to the preparation of thermoelectric materials based on micro-and nano-sized granular semiconductor particles and to the study of their properties [8][9][10][11][12]. Thermoelectric materials made on the basis of granulated semiconductor particles consist of a heterogeneous medium [11,12], parameters σ, α, λ have been observed to depend on the charge transfer process in granulated particles [13][14][15].…”

Section: Introductionmentioning

confidence: 99%

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Charge Transfer Processes In Granulated Mg3Sb2 Particles

o'g'li

Teshaboyevich

2023

Preprint

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In the article, temperature dependence of specific resistance (ρ), concentration of charge carriers (n) and mobility (µ) was studied experimentally at T = 300–700 K to study charge transfer processes in granulated Mg3Sb2 particles. The research results were explained on the basis of the charge transfer mechanism in Mg3Sb2 particles. In particular, at the initial stage of temperature increase, Т≤375 К, localized traps with energy level Ein appear in the interparticle boundary areas of the heated part of the sample. When charge carriers are trapped in them, ρ increases sharply, and n decreases. In the later stages of temperature increase, the thermal phenomenon increases along the length of the sample. In this process, localized traps with energy level Ein appear successively in the interparticle boundary regions located along the length of the sample. In relation to the charges held in them, the concentration of the generated charge carriers n increases in accordance with the increase in temperature, in this case ρ changes steadily. The increase of the potential barrier height in the interparticle boundary regions from ϕ ∼ 0.411 eV to 0.91 eV confirms the above considerations. In addition, under the influence of temperature, the particle size and impurity ionization in the interparticle boundary areas or thermal fluctuations of the crystal lattice decrease the free movement path of the carriers. This leads to a decrease in µ at T = 300–700 K.

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Section: Materials and Research Methodsmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Charge Transfer Processes In Granulated Mg3Sb2 Particles

o'g'li

Teshaboyevich

2023

Preprint

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“…As a result, the aggregate of Mg3Sb2 particles granulated inside the ceramic substrate takes the form of stergen. Egor and Disselkhorsta's method can be used to determine the thermal conductivity of stergen heated by electric current [8][9][10][11][12][13]. The novelty of the research is that, for the first time, the thermoelectric properties of granulated Mg3Sb2 particles during the temperature change of T=300-700 K were studied based on the method of Egor and Disselkhorsta [8,9].…”

Section: Methodsmentioning

confidence: 99%

Thermoelectric properties of granular Mg3Sb2 particles

Omonboev,

Tishabayevich

2023

E3S Web of Conf.

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This article presents the results obtained in the study of thermoelectric properties of granulated Mg3Sb2 particles. The results of the study show that the thermoelectric properties of granulated Mg3Sb2 particles mainly depend on the physical processes occurring in the interparticle boundary areas. As the temperature increases, the localized traps in the interparticle boundary areas are ionized, and the capture of charge carriers in them leads to a decrease in electrical conductivity (σ). The Seebeck coefficient (α) increases as the temperature difference occurs due to the potential difference and phonon absorption. Also, impurity thermal-voltaic effects appear with the formation of electron-hole pairs in impurity states with an energy level of Ein in the interparticle boundary regions. As a result, the total λ increases at the same time as the thermal conductivity of the two adjacent areas. The convergence of electrical conductivity and potential difference leads to a relatively stable change of λ. These processes lead to a change in the ZT index from ~0.021 to ~1.3 at T=300-700 K.

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