Thermoelectric performance
of the p-type semiconductor bornite,
Cu5FeS4, is greatly enhanced through chemical
substitution. Nonstoichiometric materials in which the Cu:Fe ratio
and overall cation-vacancy content were adjusted are reported, and
a figure of merit, ZT = 0.79, is achieved at temperatures as low as
550 K in Cu4.972Fe0.968S4. All materials
were synthesized mechanochemically and characterized by powder X-ray
diffraction, differential scanning calorimetry (DSC), and thermal
and electrical transport property measurements. Single-phase behavior
is retained in copper deficient phases, Cu5–x
FeS4, for vacancy levels up to x = 0.1, while in materials Cu5+y
Fe1–y
S4, in which the Cu:Fe
ratio is varied while maintaining full occupancy of cation sites,
single-phase behavior persists for y ≤ 0.08.
Adjusting the Cu:Fe ratio at a constant cation-vacancy level of 0.06
in Cu4.94+z
Fe1–z
S4, leads to single phases for z ≤ 0.04. DSC measurements indicate the temperature of the
intermediate- (2a) to high-temperature (a) phase transition shows
a more marked dependence on the Cu:Fe ratio than the lower temperature
4a to 2a transition. The thermoelectric power factor increases almost
linearly with increasing Cu(II) content. The maximum figures of merit
are obtained for materials with Cu(II) contents in the range 0.10–0.15
(corresponding to 2.0–2.8% Cu(II)), which simultaneously contain
ca. 1% of cation vacancies.