Thermoelectricity in Quantum Hall Corbino Structures

Real, Mariano; Gresta, Daniel; Reichl, Christian; Weis, J.; Tonina, Alejandra; Giudici, P.; Arrachea, Liliana; Wegscheider, Werner; Dietsche, W.

doi:10.1103/physrevapplied.14.034019

Cited by 11 publications

(14 citation statements)

References 32 publications

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“…Thermoelectricity in the quantum Hall regime in the Corbino geometry has been investigated theoretically [40,41] and experimentally [42,43], as well as in bar configurations [44,45]. In a recent work, experimental evidence of a significant thermoelectric response in a quantum Hall Corbino device was presented [46]. The theoretical modeling of this experimental data is consistent with a diffusive mechanism of the electron transport, free from FIG.…”

Section: Introductionmentioning

confidence: 67%

“…In Ref. [46] measurements for the conductance and the thermovoltage of a Corbino device with a central heater were reported. The experimental data was successfully explained on the basis of calculations of the Onsager transport coefficients in terms of a transmission function, which was inferred from the conductance.…”

Section: A Inference Of the Transmission Function From Experimental Datamentioning

confidence: 99%

“…We summarize the steps of Ref. [46] to infer the transmission function of the Corbino device from the knowledge of the experimental data for the conductance, G exp (B, T 0 ), as a function of the magnetic field B at a low temperature T 0 .…”

Section: A Inference Of the Transmission Function From Experimental Datamentioning

confidence: 99%

“…The aim of the present contribution is to present a detailed theoretical study of the cooling properties of the Corbino device investigated in Ref. 46 on the basis of the transmission function inferred from the experimental data for the conductance recorded in that work. A sketch of the considered setup is shown in Fig.…”

Section: Introductionmentioning

confidence: 99%

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Thermoelectric cooling properties of a quantum Hall Corbino device

et al. 2021

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We analyze the thermoelectric cooling properties of a Corbino device in the quantum Hall regime on the basis of experimental data of electrical conductance. We focus on the cooling power and the coefficient of performance within and beyond linear response. Thermovoltage measurements in this device reported in Phys. Rev. Applied, 14 034019 (2020) indicated that the transport takes place in the diffusive regime, without signatures of effects due to the electron-phonon interaction in a wide range of temperatures and filling factors. In this regime, the heat and charge currents by electrons can be described by a single transmission function. We infer this function from experimental data of conductance measurements and we calculate the cooling power and the coefficient of performance for a wide range of filling factors and temperatures, as functions of the thermal and electrical biases. We predict an interesting cooling performance in several parameter regimes.

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Section: Introductionmentioning

confidence: 67%

Section: A Inference Of the Transmission Function From Experimental Datamentioning

confidence: 99%

Section: A Inference Of the Transmission Function From Experimental Datamentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

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Thermoelectric cooling properties of a quantum Hall Corbino device

et al. 2021

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“…In this case the crossover width is determined by the bulk inhomogeneities of the device [20][21][22]. Recently experimental [27][28][29][30][31] and theoretical [32][33][34][35] efforts focused on hydrodynamic electron transport in the Corbino geometry. The interest in this geometry is that even in a pristine system the hydrodynamic flow generates energy dissipation associated with viscous stresses.…”

Section: Introductionmentioning

confidence: 99%

Hydrodynamic thermoelectric transport in Corbino geometry

Li,

Levchenko,

Andreev

2021

Preprint

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We study hydrodynamic electron transport in Corbino graphene devices. Due to the irrotational character of the flow the forces exerted on the electron liquid are expelled from the bulk. We show that in the absence of Galilean invariance force expulsion produces qualitatively new features in thermoelectric transport: i) it results in drops of both voltage and temperature at the system boundaries; ii) in conductance measurements in pristine systems the electric field is not expelled from the bulk. We obtain thermoelectric coefficients of the system in the entire crossover region between charge neutrality and high electron density regime. The thermal conductance exhibits a sensitive Lorentzian dependence on the electron density. The width of the Lorentzian is determined by the fluid viscosity. This enables determination of viscosity of electron liquid near charge neutrality from purely thermal transport measurements. In general, the thermoelectric response is anomalous: it violates the Matthiessen's rule, the Wiedemann-Franz law, and the Mott relation.

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Controlled generation and detection of a thermal bias in Corbino devices under the quantum Hall regime

Real

Tonina

Arrachea

et al. 2023

Applied Physics Letters

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We present an experimental technique to generate and measure a temperature bias in the quantum Hall effect of GaAs/AlGaAs Corbino samples. The bias is generated by injecting an electric current at a central resistive heater, and the resulting radial temperature drop is determined by conductance measurements at internal and external concentric rings. The experimental results agree with the predictions of numerical simulations of the heat flow through the substrate. We also compare these results with previous predictions based on the thermoelectric response of these devices.

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Thermoelectricity in Quantum Hall Corbino Structures

Cited by 11 publications

References 32 publications

Thermoelectric cooling properties of a quantum Hall Corbino device

Thermoelectric cooling properties of a quantum Hall Corbino device

Hydrodynamic thermoelectric transport in Corbino geometry

Controlled generation and detection of a thermal bias in Corbino devices under the quantum Hall regime

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