Thermoelectromotive force of p-Ge with consideration for the phonon-drag effect

Gutsul, I. V.; Nitsovich, V. M.; Ostapov, S. E.

doi:10.1007/bf00898662

Cited by 1 publication

(1 citation statement)

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“…Notwithstanding the success of previous theoretical studies on thermotransport in graphene, a careful investigation of the phonon effect on thermopower is still required. It is well known that the phonon-drag plays an important role in describing the low temperature thermopower in bulk semiconductors [28][29][30][31][32] as well as in two-dimensional parabolic band systems [33][34][35][36][37]. Recently, considering only the boundary scattering in the phonon relaxation process, Kubakaddi has demonstrated theoretically that the phonondrag contribution to TEP increases with an increase of temperature and its magnitude at T near 10 K becomes comparable with the diffusion TEP which is well described by Mott's formula [16].…”

Section: Introductionmentioning

confidence: 99%

Thermoelectric power in graphene

Bao¹,

Liu²,

Lei³

2010

J. Phys.: Condens. Matter

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Considering electron-impurity and electron-phonon scattering, we present a balance-equation-based theoretical examination of thermoelectric power (TEP) in a two-dimensional single-layer graphene away from the carrier neutrality point. Both the boundary scattering and phonon-phonon interaction in phonon relaxation processes are taken into account. We find that, at temperatures T > 10 K, the contribution to TEP mainly comes from diffusive processes and the phonon-drag effect can be ignored. However, at T ≤ 10 K, the phonon-phonon interaction leads to a phonon-drag peak in the temperature dependence of TEP. We also compare our results with experiments.

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