Abstract:In this work, the persistent luminescence mechanisms of Tb 3+ (in CdSiO 3 ) and Eu 2+ (in BaAl 2 O 4 ) based on solid experimental data are compared. The photoluminescence spectroscopy shows the different nature of the inter-and intraconfigurational transitions for Eu 2+ and Tb 3+ , respectively. The electron is the charge carrier in both mechanisms, implying the presence of electron acceptor defects. The preliminary structural analysis shows a free space in CdSiO 3 able to accommodate interstitial oxide ions needed by charge compensation during the initial preparation. The subsequent annealing removes this oxide leaving behind an electron trap. Despite the low band gap energy for CdSiO 3 , determined with synchrotron radiation UV-VUV excitation spectroscopy of Tb 3+ , the persistent luminescence from Tb 3+ is observed only with UV irradiation. The need of high excitation energy is due to the position of 1 and the ligand-to-metal charge-transfer transitions. Finally, the persistent luminescence mechanisms are constructed and, despite the differences, the mechanisms for Tb 3+ and Eu 2+ proved to be rather similar. This similarity confirms the solidity of the interpretation of experimental data for the Eu 2+ doped persistent luminescence materials and encourages the use of similar models for other persistent luminescence materials.