Abstract:A model of the first and general order kinetics describing the thermoluminescence (TL) from silicon quantum dots consisting of two active electron trap levels and one recombination center is proposed. The two trap levels are located at different trap depths beneath the edge of the conduction band. The rate equations corresponding to each trap level allow us to numerically simulate the variation of the concentration of electrons in the two traps and the TL intensity as a function of the temperature for quantum … Show more
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