Chromium-doped Ga
2
O
3
, with intense
Cr
3+
-related red-infrared light emission, is a promising
semiconductor
material for optical sensors. This work constitutes a comprehensive
study of the thermoluminescence properties of Cr-, Mg-codoped β-Ga
2
O
3
single crystals, both prior to and after proton
irradiation. The thermoluminescence investigation includes a thorough
analysis of measurements with different β
−
irradiation doses used to populate the trap levels, with preheating
steps to disentangle overlapping peaks (
T
M
-
T
STOP
and initial rise methods) and
finally by computationally fitting to a theoretical expression. At
least three traps with activation energies of 0.84, 1.0, and 1.1 eV
were detected. By comparison with literature reports, they can be
assigned to different defect complexes involving oxygen vacancies
and/or common contaminants/dopants. Interestingly, the thermoluminescence
signal is enhanced by the proton irradiation while the type of traps
is maintained. Finally, the pristine glow curve was recovered on the
irradiated samples after an annealing step at 923 K for 10 s. These
results contribute to a better understanding of the defect levels
in Cr-, Mg-codoped β-Ga
2
O
3
and show that
electrons released from these traps lead to Cr
3+
-related
light emission that can be exploited in dosimetry applications.