Thermomechanical properties of aluminum alkoxide (alucone) films created using molecular layer deposition

“…Mechanical studies of the TMA+EG hybrids showed that the material is brittle, with a toughness of about 0.17 MPa·m 0.5 [81]. The brittleness was also observed with nanointendation measurements, giving an elastic modulus of about 37 GPa and a Berkovich hardness of about 0.47 GPa [84]. However, when the TMA+EG hybrid with an additional H 2 O pulse was employed as an interlayer between ALD-grown Al 2 O 3 and a Teflon substrate, it was noticed that the stress caused by the difference in the coefficient of thermal expansion between the coating and the substrate was significantly reduced, preventing the cracking of the Al 2 O 3 coating [96].…”

Section: Reviewmentioning

confidence: 99%

“…Also experiments carried out at 130 °C showed that the self-limiting growth could be only observed when the films remained thin [108]. According to nanointendation measurements conducted for the TMA+2-aminoethanol+furan-2,5-dione films deposited at 90 °C, the elastic modulus and Berkovich hardness were about 13 GPa and about 0.27 GPa, respectively [84]. …”

Section: Reviewmentioning

confidence: 99%

Organic and inorganic–organic thin film structures by molecular layer deposition: A review

Sundberg¹,

Karppinen²

2014

Beilstein J. Nanotechnol.

287

346

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SummaryThe possibility to deposit purely organic and hybrid inorganic–organic materials in a way parallel to the state-of-the-art gas-phase deposition method of inorganic thin films, i.e., atomic layer deposition (ALD), is currently experiencing a strongly growing interest. Like ALD in case of the inorganics, the emerging molecular layer deposition (MLD) technique for organic constituents can be employed to fabricate high-quality thin films and coatings with thickness and composition control on the molecular scale, even on complex three-dimensional structures. Moreover, by combining the two techniques, ALD and MLD, fundamentally new types of inorganic–organic hybrid materials can be produced. In this review article, we first describe the basic concepts regarding the MLD and ALD/MLD processes, followed by a comprehensive review of the various precursors and precursor pairs so far employed in these processes. Finally, we discuss the first proof-of-concept experiments in which the newly developed MLD and ALD/MLD processes are exploited to fabricate novel multilayer and nanostructure architectures by combining different inorganic, organic and hybrid material layers into on-demand designed mixtures, superlattices and nanolaminates, and employing new innovative nanotemplates or post-deposition treatments to, e.g., selectively decompose parts of the structure. Such layer-engineered and/or nanostructured hybrid materials with exciting combinations of functional properties hold great promise for high-end technological applications.

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“…Another approach similar to traditional low-k aSiOC:H ILD materials is to form inorganic-organic hybrid AlOC:H films by ALD via substituting oxidizing sources such as H 2 O, O 2 , and O 3 with various organic acids or alcohols. [514][515][516][517][518] Although the low frequency dielectric constant and other important electrical properties for these hybrid materials have yet to be reported in the literature, prior studies have shown that these materials exhibit reduced mass densities, 514,515 refractive indexes, 517 and Young's modulus 518 implying that reduced values of k are likely. However, the reductions in mass density and Young's modulus also suggest that these materials may exhibit reduced diffusion barrier and etch resistance.…”

mentioning

confidence: 99%

Dielectric Barrier, Etch Stop, and Metal Capping Materials for State of the Art and beyond Metal Interconnects

King

2014

ECS J. Solid State Sci. Technol.

133

115

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Over the past decade, the primary focus for improving the performance of nano-electronic metal interconnect structures has been to reduce the impact of resistance-capacitance (RC) delays via utilizing insulating dielectrics with ever lower values of dielectric permittivity. The integration and implementation of such low dielectric constant (i.e. low-k) materials has been fraught with numerous challenges. For intermetal and interlayer (ILD) low-k dielectrics, these challenges have been largely associated to integration with metal interconnect fabrication processes and well documented and reviewed in the literature. Although equally important, less attention has been given to other low-k dielectrics utilized in metal interconnect structures that are commonly referred to as low-k dielectric barriers (DB), etch stops (ES), and/or Cu capping layers (CCL). These materials present numerous challenges as well for integration into metal interconnect fabrication processes. However, they also have more stringent integrated functionality requirements relative to low-k ILD materials that serve only a basic purpose of electrically isolating adjacent metal lines. In this article, we review the integration challenges and associated integrated functionality requirements for low-k DB/ES/CCL materials with a focus on the current status and future direction needed for these materials to facilitate both Moore's law (i.e. More Moore) and More than Moore scaling.

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Thermomechanical properties of aluminum alkoxide (alucone) films created using molecular layer deposition

Cited by 45 publications

References 38 publications

Thermo-mechanical properties of alumina films created using the atomic layer deposition technique

Thermo-mechanical properties of alumina films created using the atomic layer deposition technique

Organic and inorganic–organic thin film structures by molecular layer deposition: A review

Dielectric Barrier, Etch Stop, and Metal Capping Materials for State of the Art and beyond Metal Interconnects

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