Thermometric characteristics of semiconductor diodes

Dmitrenko, I.M.; Logvinenko, S.P.; Иванов, Н. И.; Kolot, Z.M.

doi:10.1016/0011-2275(66)90137-8

Cited by 12 publications

(1 citation statement)

References 2 publications

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“…Due to the temperature sensitivity of the forward bias current-voltage (I-V) characteristics, p-i-n diodes have been commercially available for some time as temperature sensors. 6,7 They provide wide range of operating temperatures (1.4 K-500 K), high sensitivity (hundreds mV/K), high signal level (from hundreds mV to Volt) at high stability and reproducibility. 8 From silicon-based technology, transistors also do very well in operating as temperature sensors, especially when low-cost, long-term stability, and high sensitively over a limited temperature range (À55 C-150 C) are required.…”

Section: Investigation Of Effective Base Transit Time and Current Gaimentioning

confidence: 99%

Investigation of effective base transit time and current gain modulation of light-emitting transistors under different ambient temperatures

Yang

Wang

et al. 2014

Applied Physics Letters

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In this report, the modulation of current gain of InGaP/GaAs light-emitting transistors under different ambient temperatures are measured and analyzed using thermionic emission model of quantum well embedded in the transistor base region. Minority carriers captured by quantum wells gain more energy at high temperatures and escape from quantum wells resulting in an increase of current gain and lower optical output, resulting in different I-V characteristics from conventional heterojunction bipolar transistors. The effect of the smaller thermionic lifetime thus reduces the effective base transit time of transistors at high temperatures. The unique current gain enhancement of 27.61% is achieved when operation temperature increase from 28 to 85 °C.

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Section: Investigation Of Effective Base Transit Time and Current Gaimentioning

confidence: 99%